Abstract
In order to better understand the electrical and optical properties of GaAs and AlxGa1-x As used in making double heterojunction lasers, we have studied the Hall coefficient, resistivity and photoluminescence behavior of doped epitaxial samples of these materials. In particular, we report results on Ge-doped GaAs and Alx Ga1-x As, Sn-doped AlxGa1-x As and Si-Te-doped GaAs single crystal layers which were grown on GaAs substrates by the liquid phase epitaxial method. The effects of impurities in the solution on the carrier concentration, mobility, photoluminescence spectra and possible recombination processes in these layers are discussed.
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Shih, K.K., Pettit, G.D. Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAs. J. Electron. Mater. 3, 391–408 (1974). https://doi.org/10.1007/BF02652949
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DOI: https://doi.org/10.1007/BF02652949