GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates D. S. AbramkinM. O. PetrushkovT. S. Shamirzaev XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1143 - 1147
Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators V. R. BaryshevN. S. GinzburgA. M. Malkin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1148 - 1153
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm V. V. UtochkinV. Ya. AleshkinS. V. Morozov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1154 - 1157
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique M. V. DorokhinP. B. DeminaA. V. Boryakov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1158 - 1163
Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure D. V. FateevK. V. MashinskyV. V. Popov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1164 - 1169
On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons A. V. TrifonovI. V. IgnatievV. A. Lovtcius XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1170 - 1174
Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors E. L. IvchenkoV. K. KalevichT. Amand XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1175 - 1181
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion A. E. KlimovA. N. AkimovO. E. Tereshchenko XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1182 - 1186
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates A. M. MizerovS. N. TimoshnevA. D. Bouravleuv XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1187 - 1191
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices E. S. ObolenskayaA. S. IvanovA. P. Vasilev XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1192 - 1197
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures D. V. KozlovV. V. RumyantsevS. V. Morozov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1198 - 1202
Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond A. I. OkhapkinP. A. YuninV. I. Shashkin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1203 - 1206
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures S. M. PlankinaO. V. VikhrovaA. A. Sushkov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1207 - 1210
On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing O. V. PolischukD. V. FateevV. V. Popov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1211 - 1216
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures V. V. RumyantsevK. V. MaremyaninV. I. Gavrilenko XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1217 - 1221
Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes A. S. PuzanovM. M. VenediktovV. A. Kozlov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1222 - 1228
On the Spin States of Electrons in a Double Quantum Dot in a Two-Dimensional Topological Insulator with Spin-Orbit Interaction A. A. SukhanovV. A. Sablikov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1229 - 1233
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission V. N. ShastinR. Kh. ZhukavinH.-W. Hübers XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1234 - 1237
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition V. G. ShengurovD. O. FilatovA. V. Zaitsev XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1238 - 1241
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate A. A. SushkovD. A. PavlovR. N. Kryukov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1242 - 1245
Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides G. M. UmnyaginV. E. DegtyarovS. V. Obolenskiy XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1246 - 1248
Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure I. Yu. ZabavichevA. A. PotehinV. A. Kozlov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1249 - 1254
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation R. Kh. ZhukavinS. G. PavlovV. N. Shastin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1255 - 1257
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality A. I. KhrebtovR. R. ReznikG. E. Cirlin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1258 - 1261
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers D. S. ProkhorovV. G. ShengurovN. A. Baidakova XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1262 - 1265
Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature T. A. Uaman SvetikovaA. V. IkonnikovV. I. Gavrilenko XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1266 - 1271
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes A. V. IkonnikovV. I. ChernichkinD. R. Khokhlov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 03 September 2019 Pages: 1272 - 1277