Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si K. V. KarabeshkinP. A. KaraseovA. I. Titov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 02 August 2016 Pages: 989 - 995
Temperature dependence of the hall coefficient in the Вi1–x Sb x System (x = 0.06, 0.12) B. A. TairovX. A. GasanovaR. I. Selim-zade Electronic Properties of Semiconductors 02 August 2016 Pages: 996 - 1000
Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films B. Z. PolvonovN. Kh. Yuldashev Spectroscopy, Interaction with Radiation 02 August 2016 Pages: 1001 - 1004
Study of the impurity photoconductivity in p-InSb using epitaxial p + contacts Sh. O. Eminov Surfaces, Interfaces, and Thin Films 02 August 2016 Pages: 1005 - 1009
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma Kh. A. AbdullinM. T. GabdullinE. I. Terukov Surfaces, Interfaces, and Thin Films 02 August 2016 Pages: 1010 - 1014
Conduction in titanium dioxide films and metal–TiO2–Si structures V. M. KalyginaI. M. EgorovaO. P. Tolbanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1015 - 1019
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures M. N. SolovanA. I. MostovyiP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1020 - 1024
Room temperature de Haas–van Alphen effect in silicon nanosandwiches N. T. BagraevV. Yu. GrigoryevV. V. Romanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1025 - 1033
Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique A. P. SamilaG. I. LastivkaZ. D. Kovalyuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1034 - 1037
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects I. A. AleksandrovV. G. MansurovK. S. Zhuravlev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1038 - 1042
Elastic strains and delocalized optical phonons in AlN/GaN superlattices D. V. PankinM. B. SmirnovW. V. Lundin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1043 - 1048
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime D. A. PokhabovA. G. PogosovA. K. Bakarov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2016 Pages: 1049 - 1053
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure M. M. GadzhialievZ. Sh. PirmagomedovT. N. Efendieva Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 02 August 2016 Pages: 1054 - 1055
Carrier velocity effect on carbon nanotube Schottky contact Amir FathiM. T. AhmadiRazali Ismail Carbon Systems 02 August 2016 Pages: 1056 - 1059
Electromagnetic radiation of electrons in corrugated graphene S. A. KtitorovR. I. Myhamadiarov Carbon Systems 02 August 2016 Pages: 1060 - 1064
Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications I. V. AntonovaI. A. KotinS. A. Smagulova Carbon Systems 02 August 2016 Pages: 1065 - 1073
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H A. S. AbramovD. A. AndronikovS. A. Yakovlev Physics of Semiconductor Devices 02 August 2016 Pages: 1074 - 1078
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer V. A. SergeevA. M. Hodakov Physics of Semiconductor Devices 02 August 2016 Pages: 1079 - 1084
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology A. A. BetekbaevB. N. MukashevV. V. Lee Physics of Semiconductor Devices 02 August 2016 Pages: 1085 - 1091
Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis K. S. GrishakovV. F. Elesin Physics of Semiconductor Devices 02 August 2016 Pages: 1092 - 1096
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact A. V. BabichevH. ZhangM. Tchernycheva Physics of Semiconductor Devices 02 August 2016 Pages: 1097 - 1101
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic I. V. YunusovV. A. KagadeiV. S. Arykov Physics of Semiconductor Devices 02 August 2016 Pages: 1102 - 1106
Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation P. A. AleksandrovE. K. BaranovaV. V. Budaragin Fabrication, Treatment, and Testing of Materials and Structures 02 August 2016 Pages: 1107 - 1111
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology P. G. SerafimovichM. V. StepikhovaZ. F. Krasilnik Fabrication, Treatment, and Testing of Materials and Structures 02 August 2016 Pages: 1112 - 1116
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs S. S. ArutyunyanA. Yu. PavlovYu. V. Fedorov Fabrication, Treatment, and Testing of Materials and Structures 02 August 2016 Pages: 1117 - 1121
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies Yu. M. PokotiloA. N. PetukhK. A. Solyanikova Fabrication, Treatment, and Testing of Materials and Structures 02 August 2016 Pages: 1122 - 1124
Changes in the conductivity of lead-selenide thin films after plasma etching S. P. ZiminI. I. AmirovV. V. Naumov Fabrication, Treatment, and Testing of Materials and Structures 02 August 2016 Pages: 1125 - 1129
