Abstract
The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increased amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.
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Original Russian Text © Kh.A. Abdullin, M.T. Gabdullin, L.V. Gritsenko, D.V. Ismailov, Zh.K. Kalkozova, S.E. Kumekov, Zh.O. Mukash, A.Yu. Sazonov, E.I. Terukov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1030–1035.
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Abdullin, K.A., Gabdullin, M.T., Gritsenko, L.V. et al. Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma. Semiconductors 50, 1010–1014 (2016). https://doi.org/10.1134/S1063782616080029
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DOI: https://doi.org/10.1134/S1063782616080029