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On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

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Abstract

The production technology of a photonic-crystal cavity formed as a group of holes in a silicon strip waveguide by ion-beam etching is described. The parasitic effect associated with hole conicity which develops upon hole formation by the given technology is studied. Numerical simulation shows that the hole-conicityinduced decrease in the cavity quality factor can be compensated with consideration for the hole volume. The influence of the waveguide thickness on the resonance wavelength and quality factor of the photonic-crystal cavity is analyzed.

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Authors and Affiliations

  1. Image Processing Systems Institute, Russian Academy of Sciences, Samara, 443001, Russia

    P. G. Serafimovich & N. L. Kazanskiy

  2. Samara State Aerospace University (National Research University), Samara, 443086, Russia

    P. G. Serafimovich, N. L. Kazanskiy & A. V. Egorov

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    M. V. Stepikhova, S. A. Gusev, E. V. Skorokhodov & Z. F. Krasilnik

  4. Nizhny Novgorod State University, Nizhny Novgorod, 603950, Russia

    M. V. Stepikhova, S. A. Gusev, E. V. Skorokhodov & Z. F. Krasilnik

Authors
  1. P. G. Serafimovich
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  2. M. V. Stepikhova
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  3. N. L. Kazanskiy
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  4. S. A. Gusev
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  5. A. V. Egorov
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  6. E. V. Skorokhodov
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  7. Z. F. Krasilnik
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Corresponding author

Correspondence to M. V. Stepikhova.

Additional information

Original Russian Text © P.G. Serafimovich, M.V. Stepikhova, N.L. Kazanskiy, S.A. Gusev, A.V. Egorov, E.V. Skorokhodov, Z.F. Krasilnik, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 8, pp. 1133–1137.

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Serafimovich, P.G., Stepikhova, M.V., Kazanskiy, N.L. et al. On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology. Semiconductors 50, 1112–1116 (2016). https://doi.org/10.1134/S1063782616080212

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  • DOI: https://doi.org/10.1134/S1063782616080212

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