Resonant features of the terahertz generation in semiconductor nanowires V. N. TrukhinA. D. BouravleuvH. Lipsanen XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1561 - 1565
On a new method of heterojunction formation in III–V nanowires N. V. SibirevA. A. KoryakinV. G. Dubrovskii XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1566 - 1568
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron E. A. SuroveginaE. V. DemidovD. E. Batler XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1569 - 1573
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors E. A. TarasovaE. S. ObolenskayaG. V. Medvedev XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1574 - 1578
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account E. S. ObolenskayaE. A. TarasovaV. A. Kozlov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1579 - 1583
Strained multilayer structures with pseudomorphic GeSiSn layers V. A. TimofeevA. I. NikiforovN. A. Baidakova XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1584 - 1588
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer S. V. TikhovO. N. GorshkovA. I. Morozov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1589 - 1594
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs V. I. UshanovV. V. ChaldyshevB. R. Semyagin XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1595 - 1599
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection G. E. FedorovT. S. StepanovaG. N. Goltzman XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1600 - 1603
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells A. N. YablonskyR. Kh. ZhukavinM. V. Shaleev XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1604 - 1608
Polariton condensate coherence in planar microcavities in a magnetic field A. V. ChernenkoA. Rahimi-lmanS. Hoefling XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1609 - 1613
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface M. N. KoryazhkinaS. V. TikhovI. N. Antonov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1614 - 1618
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN I. V. ShtromA. D. BouravleuvH. Lipsanen XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1619 - 1621
Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates P. A. YuninYu. N. DrozdovA. B. Muchnikov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1622 - 1625
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures V. S. VaravinV. V. VasilyevM. V. Yakushev XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1626 - 1629
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures A. V. NovikovM. V. ShaleevP. A. Yunin XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1630 - 1634
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity D. V. IshchenkoA. E. KlimovV. S. Epov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1635 - 1640
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures S. V. GudinaYu. G. ArapovA. N. Vinichenko XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1641 - 1646
Polarization of the photoluminescence of quantum dots incorporated into quantum wires A. V. PlatonovV. P. KochereshkoH. Mariette XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1647 - 1650
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells V. V. RumyantsevM. A. FadeevF. Teppe XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1651 - 1656
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers N. A. BaidakovaA. V. NovikovZ. F. Krasilnik XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1657 - 1661
Mercury vacancies as divalent acceptors in Hg y Te1 – y /Cd x Hg1 – x Te structures with quantum wells D. V. KozlovV. V. RumyantsevF. Teppe XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1662 - 1668
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm K. V. MaremyaninV. V. RumyantsevV. I. Gavrilenko XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1669 - 1672
Polarization of the induced THz emission of donors in silicon K. A. KovalevskyR. Kh. ZhukavinV. N. Shastin XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1673 - 1677
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation A. S. PuzanovS. V. ObolenskiyV. A. Kozlov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1678 - 1683
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm A. N. AkimovA. E. KlimovV. V. Rumyantsev XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1684 - 1690
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells V. Ya. AleshkinL. V. GavrilenkoD. I. Kryzhkov XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 03 February 2017 Pages: 1691 - 1695