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Polarization of the induced THz emission of donors in silicon

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
  • Published:
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Abstract

The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO2 laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.

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References

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    K. A. Kovalevsky, R. Kh. Zhukavin & V. V. Tsyplenkov

  2. Humboldt University of Berlin, Berlin, 10099, Germany

    S. G. Pavlov & H. -W. Hübers

  3. Institute of Optical Sensor Systems DLR, Berlin, 12489, Germany

    H. -W. Hübers

  4. Leibniz Institute for Crystal Growth, Berlin, D-12489, Germany

    N. V. Abrosimov & V. N. Shastin

Authors
  1. K. A. Kovalevsky
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  2. R. Kh. Zhukavin
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  3. V. V. Tsyplenkov
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  4. S. G. Pavlov
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  5. H. -W. Hübers
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  6. N. V. Abrosimov
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  7. V. N. Shastin
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Corresponding author

Correspondence to K. A. Kovalevsky.

Additional information

Original Russian Text © K.A. Kovalevsky, R.Kh. Zhukavin, V.V. Tsyplenkov, S.G. Pavlov, H.-W. Hübers, N.V. Abrosimov, V.N. Shastin, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 12, pp. 1701–1705.

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Kovalevsky, K.A., Zhukavin, R.K., Tsyplenkov, V.V. et al. Polarization of the induced THz emission of donors in silicon. Semiconductors 50, 1673–1677 (2016). https://doi.org/10.1134/S1063782616120101

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  • DOI: https://doi.org/10.1134/S1063782616120101

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