Abstract
The optical reflection from periodic structures based on a semiconductor AlGaAs matrix containing 2D arrays of plasmonic AsSb nanoinclusions is studied. The number of nanoinclusion layers is 12 or 24, and the nominal spatial periods are 100 or 110 nm, respectively. In the experimental spectra of the optical reflection coefficient at normal incidence, we observe resonant Bragg diffraction with the main peaks at wavelengths of 757 or 775 nm (1.64 or 1.60 eV), depending on the spatial period of the nanostructure. The magnitudes of the resonance peaks reach 22 and 31% for the systems of 12 and 24 AsSb–AlGaAs layers, while the volume fraction of the nanoinclusions is much less than 1%. In the case of light incident at inclined angles, the Bragg-diffraction pattern shifts according to Wulff–Bragg’s law. Numerical simulation of the optical reflection spectra is performed using the transfer-matrix method by taking into account the spatial geometry of the structures and the resonance characteristics of the plasmonic AsSb layers.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Kauranen and A. V. Zayats, Nat. Photon. 6, 737 (2012).
K. Yao and Y. Liu, Nanotechnol. Rev. 3, 177 (2014).
M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, J. M. Woodall, G. D. Pettit, P. D. Kirchner, F. Cardone, A. C. Warren, and D. D. Nolte, J. Appl. Phys. 72, 3509 (1992).
D. D. Nolte, J. Appl. Phys. 85, 6259 (1999).
V. V. Chaldyshev, Mater. Sci. Eng. B 88, 195 (2002).
C. Bohren and D. Huffman, Absorption and Scattering of Light by Small Particles (Wiley, New York, 1998; Mir, Moscow, 1986).
M. Born and E. Wolf, Principles of Optics, 7th ed. (Cambridge Univ., UK, 2002).
L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenski, and V. V. Chaldyshev, Crystallogr. Rep. 41, 1 (2002).
N. A. Bert, A. I. Veinger, M. D. Vilisova, S. I. Goloshchapov, I. V. Ivonin, S. V. Kozyrev, A. E. Kunitsyn, L. G. Lavrent’eva, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Tret’yakov, V. V. Chaldyshev, and M. P. Yakubenya, Phys. Solid State 35, 1289 (1993).
N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner, Appl. Phys. Lett. 74, 1588 (1999).
V. V. Chaldyshev, M. A. Putyato, B. R. Semyagin, V. V. Preobrazhenskii, O. P. Pchelyakov, A. V. Khan, V. G. Kanaev, L. S. Shirokova, A. V. Golikov, V. A. Kagadei, Yu. V. Lilenko, and N. V. Karpovich, Elektron. Prom-st’, Nos. 1–2, 154 (1998).
V. I. Ushanov, V. V. Chaldyshev, N. D. Il’inskaya, N. M. Lebedeva, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Phys. Solid State 56, 1952 (2014).
V. I. Ushanov, V. V. Chaldyshev, N. A. Bert, V. N. Nevedomskii, N. D. Il’inskaya, N. M. Lebedeva, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Semiconductors 49, 1587 (2015).
P. V. Lukin, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Semiconductors 46, 1291 (2012).
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Semiconductors 47, 1046 (2013).
S. Adachi, J. Appl. Phys. 58, 3 (1985).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.I. Ushanov, V.V. Chaldyshev, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 12, pp. 1620–1624.
Rights and permissions
About this article
Cite this article
Ushanov, V.I., Chaldyshev, V.V., Preobrazhenskii, V.V. et al. Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs. Semiconductors 50, 1595–1599 (2016). https://doi.org/10.1134/S1063782616120253
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616120253