Skip to main content
SpringerLink
Log in

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. N. Bessolov and M. V. Lebedev, Semiconductors 32, 1141 (1998).

    Article  ADS  Google Scholar 

  2. B. I. Bednyi, Soros. Obrazov. Zh. 7, 114 (1998).

    Google Scholar 

  3. V. Dhaka, A. Perros, S. Naureen, N. Shahid, H. Jiang, J.-P. Kakko, T. Haggren, E. Kauppinen, A. Srinivasan, and H. Lipsanen, AIP Adv. 6, 015016 (2016).

    Article  ADS  Google Scholar 

  4. P. A. Alekseev, M. S. Dunaevskiy, V. P. Ulin, T.V.Lvova, D. O. Filatov, A. V. Nezhdanov, A. I. Mashin, and V. L. Berkovits, Nano Lett. 15, 63 (2015).

    Article  ADS  Google Scholar 

  5. N. Tajik, C. M. Haapamaki, and R. R. LaPierre, Nanotechnology 23, 315703 (2012).

    Article  ADS  Google Scholar 

  6. M. Mattila, T. Hakkarainen, H. Lipsanen, H. Jiang, and E. I. Kauppinen, Appl. Phys. Lett. 90, 033101 (2007).

    Article  ADS  Google Scholar 

  7. A. V. Senichev, V. G. Talalaev, I. V. Shtrom, H. Blumtritt, G. E. Cirlin, J. Schilling, and Ch. P. Werner, ACS Photon. 1, 1099 (2014).

    Article  Google Scholar 

  8. L. V. Titova, Th. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, H. J. Joyce, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 89, 173126 (2006).

    Article  ADS  Google Scholar 

  9. V. Dhaka, J. Oksanen, H. Jiang, T. Haggren, A. Nykänen, R. Sanatinia, J.-P. Kakko, T. Huhtio, M. Mattila, J. Ruokolainen, S. Anand, E. Kauppinen, and H. Lipsanen, Nano Lett. 13, 3581 (2013).

    Article  ADS  Google Scholar 

  10. G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J. C. Harmand, and F. Glas, Phys. Status Solidi RRL 3, 112 (2009).

    Article  Google Scholar 

  11. V. Novikov, S. Yu. Serov, N. G. Filosofov, I. V. Shtrom, V. G. Talalaev, O. F. Vyvenko, E. V. Ubyivovk, Yu.B. Samsonenko, A. D. Bouravleuv, I. P. Soshnikov, N. V. Sibirev, G. E. Cirlin, and V. G. Dubrovskii, Phys. Status Solidi RRL 4, 175 (2010).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. V. Shtrom, A. D. Bouravleuv & I. P. Soshnikov

  2. St. Petersburg National Research Academic University—Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. V. Shtrom, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, R. R. Reznik & G. E. Cirlin

  3. Institute of Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103, Russia

    I. V. Shtrom, A. D. Bouravleuv, Yu. B. Samsonenko, I. P. Soshnikov & G. E. Cirlin

  4. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg, 197101, Russia

    Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik & G. E. Cirlin

  5. Aalto University, Espoo, FI-00076, Finland

    V. Dhaka, A. Perros & H. Lipsanen

  6. St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia

    R. R. Reznik

Authors
  1. I. V. Shtrom
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. D. Bouravleuv
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yu. B. Samsonenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. I. Khrebtov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. I. P. Soshnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. R. R. Reznik
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. G. E. Cirlin
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. V. Dhaka
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. Perros
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. H. Lipsanen
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. V. Shtrom.

Additional information

Original Russian Text © I.V. Shtrom, A.D. Bouravleuv, Yu.B. Samsonenko, A.I. Khrebtov, I.P. Soshnikov, R.R. Reznik, G.E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 12, pp. 1644–1646.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Shtrom, I.V., Bouravleuv, A.D., Samsonenko, Y.B. et al. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. Semiconductors 50, 1619–1621 (2016). https://doi.org/10.1134/S1063782616120186

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782616120186

Search

Navigation