1. Structural defect generation and band-structure features in the HfNi_{1 − x} Co _x Sn semiconductor

   • V. A. Romaka
   • P. Rogl
   • A. M. Goryn

   Electronic Properties of Semiconductors 02 August 2015 Pages: 985 - 991

2. Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er

   • M. M. Mezdrogina
   • M. V. Eremenko
   • E. I. Terukov

   Spectroscopy, Interaction with Radiation 02 August 2015 Pages: 992 - 999

3. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells

   • S. V. Sorokin
   • S. V. Gronin
   • S. V. Ivanov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1000 - 1006

4. On the shift of the electroluminescence spectra of In _x Ga_{1 − x} N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

   • V. P. Veleschuk
   • A. I. Vlasenko
   • V. V. Borshch

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1007 - 1011

5. Deep centers in TiO₂-Si structures

   • V. M. Kalygina
   • Yu. S. Petrova
   • S. Yu. Tsupiy

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1012 - 1018

6. Al _x Ga_{1 − x} As/GaAs(100) hetermostructures with anomalously high carrier mobility

   • P. V. Seredin
   • D. L. Goloshchapov
   • A. V. Popov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1019 - 1024

7. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

   • V. A. Georgobiani
   • K. A. Gonchar
   • V. Yu. Timoshenko

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1025 - 1029

8. Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films

   • N. I. Klyui
   • M. A. Semenenko
   • Wei Han

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1030 - 1034

9. Capacitance-voltage characteristics of (Al/Ti)/Al₂O₃/n-GaN MIS structures

   • P. A. Ivanov
   • A. S. Potapov
   • E. V. Osachev

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1035 - 1038

10. Study of a MHEMT heterostructure with an In_0.4Ga_0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping

    • A. N. Aleshin
    • A. S. Bugaev
    • O. A. Ruban

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1039 - 1044

11. Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field

    • M. B. Shalimova
    • N. V. Sachuk

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1045 - 1051

12. Investigation of microcrystalline silicon by the small-angle X-ray-scattering technique

    • M. D. Sharkov
    • M. E. Boiko
    • S. G. Konnikov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 02 August 2015 Pages: 1052 - 1056

13. Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon

    • A. V. Baklanov
    • A. A. Gutkin
    • P. N. Brunkov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 02 August 2015 Pages: 1057 - 1061

14. Thermoelectric transport in epitaxial graphene on a size-quantized substrate

    • Z. Z. Alisultanov
    • N. A. Mirzegasanova

    Carbon Systems 02 August 2015 Pages: 1062 - 1068

15. Vacancies in epitaxial graphene

    • S. Yu. Davydov

    Carbon Systems 02 August 2015 Pages: 1069 - 1078

16. GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm

    • V. P. Khvostikov
    • S. V. Sorokina
    • N. Kh. Timoshina

    Physics of Semiconductor Devices 02 August 2015 Pages: 1079 - 1082

17. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    • A. A. Podoskin
    • I. S. Shashkin
    • I. S. Tarasov

    Physics of Semiconductor Devices 02 August 2015 Pages: 1083 - 1089

18. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

    • A. M. Nadtochiy
    • S. A. Mintairov
    • A. E. Zhukov

    Physics of Semiconductor Devices 02 August 2015 Pages: 1090 - 1094

19. Site-Controlled Growth of Single InP QDs

    • A. S. Vlasov
    • A. M. Mintairov
    • R. A. Babunts

    Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1095 - 1098

20. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    • P. A. Aleksandrov
    • N. E. Belova
    • S. G. Shemardov

    Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1099 - 1103

21. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    • N. A. Baidakova
    • A. I. Bobrov
    • Z. F. Krasilnik

    Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1104 - 1110

22. Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs

    • R. A. Salii
    • S. A. Mintairov
    • N. A. Kalyuzhnyy

    Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1111 - 1118