Abstract
It is established that the deposition of a diamond-like film onto a structure with silicon nanoclusters in a silicon dioxide matrix yields an increase in the long-wavelength photoluminescence intensity of silicon nanoclusters due to the passivation of active-recombination centers with hydrogen and a shift of the photoluminescence peak to the region of higher photosensitivity of silicon-based solar cells. It is also shown that, due to the deposited diamond-like film, the resistance of such a structure to degradation upon exposure to γ radiation is improved, which is also defined by the effect of the passivation of radiation-induced activerecombination centers by hydrogen that is released from the films during treatment.
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Š. Meskinis and A. Tamuleviciene, Mater. Sci. 17, 358 (2011).
M. H. Oliveira, Jr., D. S. Silva, A. D. S. Cortes, M. A. B. Namani, and F. C. Marques, Diamond Relat. Mater. 18, 1028 (2009).
A. A. Evtukh, V. G. Litovchenko, N. I. Klyui, R. I. Marchenko, and S. Yu. Kudzinovski, J. Vac. Sci. Technol. B 17, 679 (1999).
V. G. Litovchenko and N. I. Klyui, Solar Energy Mater. Solar Cells 68, 55 (2001).
V. I. Gavrilenko, A. M. Grekhov, A. M. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors (Nauk. Dumka, Kiev, 1987), p. 608 [in Russian].
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 2, p. 456.
M. M. Koltun, Solar Cells: Their Optics and Metrology (Nauka, Moscow, 1985; Allerton Press, New York, 1988), p. 280.
O. Nichiporuk, A. Kaminski, M. Lemiti, A. Fave, S. Litvinenko, and V. Skryshevsky, Thin Solid Films 511–512, 248 (2006).
I. I. Ivanov, V. A. Skryshevsky, T. Nychyporuk, M. Lemiti, A. V. Makarov, N. I. Klyui, and O. V. Tretyak, Renewable Energy 55, 79 (2013).
N. I. Klyui, A. N. Lukyanov, A. V. Makarov, et al., in Proceedings of the World Renewable Energy Congress (Linkoping, Sweden, 2011), p. 2787.
A. R. Wilkinson and R. G. Elliman, J. Appl. Phys. 96, 4018 (2004).
D. Gamov, I. Khatsevych, V. Lytovchenko, V. Melnik, O. Oberemok, V. Popov, B. Romanyuk, and V. Yukhimchuk, Ukr. J. Phys. 54, 413 (2009).
N. I. Klyui, I. M. Khatsevich, A. N. Lukyanov, A. V. Makarov, and F. V. Fomovskii, Vestn. KrNU 72(5), 11 (2012).
G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A. F. Leier, and M.-O. Ruault, Semiconductors 36, 647 (2002).
A. R. Wilkinson and R. G. Elliman, Phys. Rev. B 68, 155302 (2003).
N. I. Klyui, V. G. Litovchenko, I. P. Lisovsky, A. N. Lukyanov, V. B. Lozinsky, M. V. Voitovich, and A. N. Klyui, Ukr. J. Phys. 56, 461 (2011).
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Original Russian Text © N.I. Klyui, M.A. Semenenko, I.M. Khatsevich, A.V. Makarov, A.N. Kabaldin, F.V. Fomovskii, Wei Han, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 8, pp. 1056–1060.
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Klyui, N.I., Semenenko, M.A., Khatsevich, I.M. et al. Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films. Semiconductors 49, 1030–1034 (2015). https://doi.org/10.1134/S1063782615080126
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DOI: https://doi.org/10.1134/S1063782615080126