Skip to main content
Log in

Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

It is established that the deposition of a diamond-like film onto a structure with silicon nanoclusters in a silicon dioxide matrix yields an increase in the long-wavelength photoluminescence intensity of silicon nanoclusters due to the passivation of active-recombination centers with hydrogen and a shift of the photoluminescence peak to the region of higher photosensitivity of silicon-based solar cells. It is also shown that, due to the deposited diamond-like film, the resistance of such a structure to degradation upon exposure to γ radiation is improved, which is also defined by the effect of the passivation of radiation-induced activerecombination centers by hydrogen that is released from the films during treatment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Š. Meskinis and A. Tamuleviciene, Mater. Sci. 17, 358 (2011).

    Google Scholar 

  2. M. H. Oliveira, Jr., D. S. Silva, A. D. S. Cortes, M. A. B. Namani, and F. C. Marques, Diamond Relat. Mater. 18, 1028 (2009).

    Article  ADS  Google Scholar 

  3. A. A. Evtukh, V. G. Litovchenko, N. I. Klyui, R. I. Marchenko, and S. Yu. Kudzinovski, J. Vac. Sci. Technol. B 17, 679 (1999).

    Article  Google Scholar 

  4. V. G. Litovchenko and N. I. Klyui, Solar Energy Mater. Solar Cells 68, 55 (2001).

    Article  Google Scholar 

  5. V. I. Gavrilenko, A. M. Grekhov, A. M. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors (Nauk. Dumka, Kiev, 1987), p. 608 [in Russian].

    Google Scholar 

  6. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 2, p. 456.

    Google Scholar 

  7. M. M. Koltun, Solar Cells: Their Optics and Metrology (Nauka, Moscow, 1985; Allerton Press, New York, 1988), p. 280.

    Google Scholar 

  8. O. Nichiporuk, A. Kaminski, M. Lemiti, A. Fave, S. Litvinenko, and V. Skryshevsky, Thin Solid Films 511–512, 248 (2006).

    Article  Google Scholar 

  9. I. I. Ivanov, V. A. Skryshevsky, T. Nychyporuk, M. Lemiti, A. V. Makarov, N. I. Klyui, and O. V. Tretyak, Renewable Energy 55, 79 (2013).

    Article  Google Scholar 

  10. N. I. Klyui, A. N. Lukyanov, A. V. Makarov, et al., in Proceedings of the World Renewable Energy Congress (Linkoping, Sweden, 2011), p. 2787.

    Google Scholar 

  11. A. R. Wilkinson and R. G. Elliman, J. Appl. Phys. 96, 4018 (2004).

    Article  ADS  Google Scholar 

  12. D. Gamov, I. Khatsevych, V. Lytovchenko, V. Melnik, O. Oberemok, V. Popov, B. Romanyuk, and V. Yukhimchuk, Ukr. J. Phys. 54, 413 (2009).

    Google Scholar 

  13. N. I. Klyui, I. M. Khatsevich, A. N. Lukyanov, A. V. Makarov, and F. V. Fomovskii, Vestn. KrNU 72(5), 11 (2012).

    Google Scholar 

  14. G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A. F. Leier, and M.-O. Ruault, Semiconductors 36, 647 (2002).

    Article  ADS  Google Scholar 

  15. A. R. Wilkinson and R. G. Elliman, Phys. Rev. B 68, 155302 (2003).

    Article  ADS  Google Scholar 

  16. N. I. Klyui, V. G. Litovchenko, I. P. Lisovsky, A. N. Lukyanov, V. B. Lozinsky, M. V. Voitovich, and A. N. Klyui, Ukr. J. Phys. 56, 461 (2011).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to N. I. Klyui.

Additional information

Original Russian Text © N.I. Klyui, M.A. Semenenko, I.M. Khatsevich, A.V. Makarov, A.N. Kabaldin, F.V. Fomovskii, Wei Han, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 8, pp. 1056–1060.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Klyui, N.I., Semenenko, M.A., Khatsevich, I.M. et al. Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films. Semiconductors 49, 1030–1034 (2015). https://doi.org/10.1134/S1063782615080126

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782615080126

Keywords

Navigation