Abstract
Results on the molecular-beam epitaxy growth of short-period alternately-strained ZnS x Se1−x /CdSe superlattices which are pseudomorphic to GaAs (001) substrates and possess effective band-gap values within the range of E g ≈ 2.5–2.7 eV are presented. Oscillations of the specular-spot intensity in reflection high-energy electron diffraction are used for in situ control of the superlattice parameters. A method to determine the SL parameters (compositions and thicknesses of the constituent layers) based on combined analysis of the grown structures by low-temperature photoluminescence and X-ray diffractometry is developed. It is found that the parameters of the grown ZnS x Se1 − x /CdSe superlattices are close to their design values and the density of extended defects in the structures is low even though the structure thickness (∼300 nm) considerably exceeds the critical thickness for bulk II–VI layers with the same lattice-constant mismatch.
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Original Russian Text © S.V. Sorokin, S.V. Gronin, I.V. Sedova, G.V. Klimko, E.A. Evropeitsev, M.V. Baidakova, A.A. Sitnikova, A.A. Toropov, S.V. Ivanov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 8, pp. 1024–1030.
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Sorokin, S.V., Gronin, S.V., Sedova, I.V. et al. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells. Semiconductors 49, 1000–1006 (2015). https://doi.org/10.1134/S1063782615080217
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DOI: https://doi.org/10.1134/S1063782615080217