1. Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer

   • F. O. Ivashchyshyn
   • I. I. Grygorchak
   • B. P. Bakhmatyuk

   Electrical and Optical Properties of Semiconductors 22 July 2010 Pages: 835 - 840

2. Physics with isotopically controlled semiconductors

   • E. E. Haller

   Electrical and Optical Properties of Semiconductors 22 July 2010 Pages: 841 - 853

3. Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals

   • A. P. Odrinsky

   Electrical and Optical Properties of Semiconductors 22 July 2010 Pages: 854 - 856

4. Optical properties of quaternary GaN _x As _y P_{1 − x − y} semiconductor alloys

   • A. Yu. Egorov
   • N. V. Kryzhanovskaya
   • M. M. Pavlov

   Electrical and Optical Properties of Semiconductors 22 July 2010 Pages: 857 - 860

5. Dependence of photoluminescence spectra of epitaxial Pb_{1 − x} Eu _x Te (0 ≤ x ≤ 0.1) alloy layers on conditions of growth

   • D. A. Pashkeev
   • Yu. G. Selivanov
   • I. I. Zasavitskiy

   Electrical and Optical Properties of Semiconductors 22 July 2010 Pages: 861 - 866

6. Calculation of the charge-carrier mobility in diamond at low temperatures

   • A. S. Baturin
   • V. N. Gorelkin
   • I. V. Chernousov

   Electrical and Optical Properties of Semiconductors 22 July 2010 Pages: 867 - 871

7. Bistable low temperature (77 K) impurity breakdown in p-type 4H-SiC

   • P. A. Ivanov
   • A. S. Potapov
   • T. P. Samsonova

   Semiconductor Structures, Interfaces, and Surfaces 22 July 2010 Pages: 872 - 874

8. Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures

   • Sh. M. Hasannli
   • N. N. Mursakulov
   • R. K. Guseynov

   Semiconductor Structures, Interfaces, and Surfaces 22 July 2010 Pages: 875 - 878

9. Effect of rectification of current induced by an electromagnetic wave in graphene: A numerical simulation

   • D. V. Zavyalov
   • S. V. Kryuchkov
   • T. A. Tyul’kina

   Low-Dimensional Systems 22 July 2010 Pages: 879 - 883

10. Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots

    • N. V. Bondar
    • M. S. Brodyn

    Low-Dimensional Systems 22 July 2010 Pages: 884 - 892

11. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    • O. I. Rumyantsev
    • P. N. Brunkov
    • A. Yu. Egorov

    Low-Dimensional Systems 22 July 2010 Pages: 893 - 897

12. Electron transport in an In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As quantum well with a δ-Si doped barrier in high electric fields

    • I. S. Vasil’evskii
    • G. B. Galiev
    • V. Jucienė

    Low-Dimensional Systems 22 July 2010 Pages: 898 - 903

13. Varistor effect in polymer-semiconductor composites

    • M. K. Kerimov
    • M. A. Kurbanov
    • U. V. Yusifova

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 22 July 2010 Pages: 904 - 911

14. Numerical simulation of time-dependent geminate recombination in polymers

    • N. A. Korolev
    • V. R. Nikitenko
    • A. P. Tyutnev

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 22 July 2010 Pages: 912 - 918

15. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    • A. Yu. Egorov
    • A. G. Gladyshev
    • A. A. Gorbazevich

    Physics of Semiconductor Devices 22 July 2010 Pages: 919 - 923

16. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    • V. S. Sizov
    • A. F. Tsatsulnikov
    • J. L. Merz

    Physics of Semiconductor Devices 22 July 2010 Pages: 924 - 930

17. Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures

    • S. K. Lyubutin
    • S. N. Rukin
    • S. N. Tsyranov

    Physics of Semiconductor Devices 22 July 2010 Pages: 931 - 937

18. Growth of (InSb)_{1 − x} (Sn₂) _x films on GaAs substrates by liquid-phase epitaxy

    • A. S. Saidov
    • M. S. Saidov
    • U. P. Asatova

    Fabrication, Treatment, and Testing of Materials and Structures 22 July 2010 Pages: 938 - 945

19. Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions

    • A. P. Belyaev
    • V. P. Rubets
    • E. O. Eremina

    Fabrication, Treatment, and Testing of Materials and Structures 22 July 2010 Pages: 946 - 948

20. Structural and optical properties of InAlN/GaN distributed Bragg reflectors

    • S. O. Usov
    • E. E. Zavarin
    • N. N. Ledentsov

    Fabrication, Treatment, and Testing of Materials and Structures 22 July 2010 Pages: 949 - 953

21. Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon

    • Yu. A. Zharova
    • G. V. Fedulova
    • T. S. Perova

    Fabrication, Treatment, and Testing of Materials and Structures 22 July 2010 Pages: 954 - 961

22. MBE growth and characterization of 5-μm quantum-cascade lasers

    • V. V. Mamutin
    • V. M. Ustinov
    • H. Kuenzel

    Fabrication, Treatment, and Testing of Materials and Structures 22 July 2010 Pages: 962 - 968

23. The problem of uniformity of properties of 4H-SiC CVD films

    • A. M. Ivanov
    • N. B. Strokan
    • A. A. Lebedev

    Fabrication, Treatment, and Testing of Materials and Structures 22 July 2010 Pages: 969 - 973