Abstract
Quantum-cascade lasers, which are obtained by molecular-beam epitaxy, emit at wavelengths of 5.0 μm at 77 K and 5.2 μm at 300 K and are based on a design with four quantum wells in the active region with vertical transitions and strain-compensated superlattices with high-efficiency injection and a short lifetime of the ground state are fabricated. The typical thresholds for lasing at 300 K were in the range 4–10 kA/cm2. The maximum emission power was as high as ∼1 W, the maximum lasing temperature was ∼450 K, and the maximum characteristic temperature T 0 ≈ 200 K. The use of a modified process of postgrowth treatment made it possible to reproducibly obtain high-quality devices.
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Original Russian Text © V.V. Mamutin, V.M. Ustinov, J. Boetthcher, H. Kuenzel, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 7, pp. 995–1001.
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Mamutin, V.V., Ustinov, V.M., Boetthcher, J. et al. MBE growth and characterization of 5-μm quantum-cascade lasers. Semiconductors 44, 962–968 (2010). https://doi.org/10.1134/S1063782610070225
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DOI: https://doi.org/10.1134/S1063782610070225