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Structural and optical properties of InAlN/GaN distributed Bragg reflectors

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Abstract

Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460–610 nm.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. O. Usov, E. E. Zavarin, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, A. E. Nikolaev, M. A. Sinitsyn, N. V. Kryzhanovskaya, S. I. Troshkov & N. N. Ledentsov

  2. Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. O. Usov, E. E. Zavarin, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov & A. E. Nikolaev

  3. St. Petersburg Physics and Technology Center for Research and Education, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    M. A. Sinitsyn

Authors
  1. S. O. Usov
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  2. E. E. Zavarin
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  3. A. F. Tsatsul’nikov
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  4. V. V. Lundin
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  5. A. V. Sakharov
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  6. A. E. Nikolaev
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  7. M. A. Sinitsyn
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  8. N. V. Kryzhanovskaya
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  9. S. I. Troshkov
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  10. N. N. Ledentsov
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Correspondence to S. O. Usov.

Additional information

Original Russian Text © S.O. Usov, E.E. Zavarin, A.F. Tsatsul’nikov, V.V. Lundin, A.V. Sakharov, A.E. Nikolaev, M.A. Sinitsyn, N.V. Kryzhanovskaya, S.I. Troshkov, N.N. Ledentsov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 7, pp. 981–985.

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Usov, S.O., Zavarin, E.E., Tsatsul’nikov, A.F. et al. Structural and optical properties of InAlN/GaN distributed Bragg reflectors. Semiconductors 44, 949–953 (2010). https://doi.org/10.1134/S1063782610070201

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  • DOI: https://doi.org/10.1134/S1063782610070201

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