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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

  • Physics of Semiconductor Devices
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Abstract

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1–3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin & A. E. Nikolaev

  2. Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin & A. E. Nikolaev

  3. Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), Toulouse, 31055, France

    N. A. Cherkashin & M. J. Hÿtch

  4. EE Department, University of Notre Dame, Notre Dame, IN, 46556, USA

    A. M. Mintairov, Yan He & J. L. Merz

Authors
  1. V. S. Sizov
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  2. A. F. Tsatsulnikov
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  3. A. V. Sakharov
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  4. W. V. Lundin
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  5. E. E. Zavarin
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  6. N. A. Cherkashin
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  7. M. J. Hÿtch
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  8. A. E. Nikolaev
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  9. A. M. Mintairov
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  10. Yan He
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  11. J. L. Merz
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Corresponding author

Correspondence to V. S. Sizov.

Additional information

Original Russian Text © V.S. Sizov, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, N.A. Cherkashinc, M.J. Hÿtch, A.E. Nikolaev, A.M. Mintairov, Yan He, J.L. Merz, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 7, pp. 955–961.

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Sizov, V.S., Tsatsulnikov, A.F., Sakharov, A.V. et al. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes. Semiconductors 44, 924–930 (2010). https://doi.org/10.1134/S106378261007016X

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  • DOI: https://doi.org/10.1134/S106378261007016X

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