Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN P. A. KaraseovA. Yu. AzarovS. O. Kucheyev Atomic Structure and Nonelectronic Propertties of Semiconductors 09 June 2009 Pages: 691 - 700
Phase transformations in II–V semiconductors under high pressure A. Yu. MollaevL. A. SaypulaevaA. N. Babushkin Atomic Structure and Nonelectronic Propertties of Semiconductors 09 June 2009 Pages: 701 - 705
Structure of cadmium selen-telluride alloy films grown by the thermal-screen method under highly nonequilibrium conditions A. P. BelyaevV. P. RubetsKh. A. Toshkhodzhaev Atomic Structure and Nonelectronic Propertties of Semiconductors 09 June 2009 Pages: 706 - 709
Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus Yu. A. AstrovV. A. KozlovR. Hergenröder Atomic Structure and Nonelectronic Propertties of Semiconductors 09 June 2009 Pages: 710 - 715
Distribution of electric fields in ZnS:Mn single crystals during electroluminescence M. F. BulanuyA. V. KovalenkoT. A. Prokof’yev Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 716 - 720
The influence of the energy of photoexcitation in the course of electron irradiation on defect formation in n-Si crystals T. A. PagavaN. I. Maisuradze Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 721 - 725
Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB2 films A. E. BelyaevN. S. BoltovetsV. V. Milenin Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 726 - 729
Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals V. D. PopovychP. PoteraM. F. Bilyk Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 730 - 734
Specific features of electronic and vibrational properties of I-V-V2 crystals Yu. M. BasalaevA. V. KosobutskyA. S. Poplavnoi Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 735 - 739
Application of the theory of transient processes in high-resistivity semiconductors to the determination of properties of the cold Universe B. I. Fouks Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 740 - 744
The variation in activity of recombination centers in silicon p-n structures under the conditions of acoustic loading O. Ya. Olikh Electrical and Optical Properties of Semiconductors 09 June 2009 Pages: 745 - 750
Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes V. M. KalyginaV. Ju. Gricyk Semiconductor Structures, Interfaces, and Surfaces 09 June 2009 Pages: 751 - 755
Study of the 3C-SiC layers grown on the 15R-SiC substrates A. A. LebedevP. L. AbramovA. S. Tregubova Semiconductor Structures, Interfaces, and Surfaces 09 June 2009 Pages: 756 - 759
The quantum solution of the accumulation layer problem of n-InN A. A. KlochikhinI. Yu. Strashkova Semiconductor Structures, Interfaces, and Surfaces 09 June 2009 Pages: 760 - 764
Thin-film polycrystalline n-ZnO/p-CuO heterojunction O. L. LisitskiM. E. KumekovE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces 09 June 2009 Pages: 765 - 767
Nonradiative recombination in GaN quantum dots formed in the AlN matrix I. A. AleksandrovK. S. ZhuravlevV. G. Mansurov Low-Dimensional Systems 09 June 2009 Pages: 768 - 774
Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots L. V. BorkovskaN. E. KorsunskaG. Chornokur Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 June 2009 Pages: 775 - 781
Relaxation of optically stimulated resistance of thin SnO2 films D. V. RusskihS. I. Rembeza Physics of Semiconductor Devices 09 June 2009 Pages: 782 - 786
Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors M. L. OrlovA. N. PaninL. K. Orlov Physics of Semiconductor Devices 09 June 2009 Pages: 787 - 795
Intersegment resistance in silicon p—n-Junction position-sensitive detectors V. K. EreminE. M. VerbitskayaK. A. Konkov Physics of Semiconductor Devices 09 June 2009 Pages: 796 - 800
Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers Yu. N. BobrenkoS. Yu. PaveletsA. M. Pavelets Physics of Semiconductor Devices 09 June 2009 Pages: 801 - 806
Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix V. S. SizovA. A. GutkinA. F. Tsatsul’nikov Physics of Semiconductor Devices 09 June 2009 Pages: 807 - 811
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs A. V. SakharovW. V. LundinA. F. Tsatsulnikov Physics of Semiconductor Devices 09 June 2009 Pages: 812 - 817
Spontaneous detachment of a sublimation-Grown AlN layer from a SiC-6H substrate A. A. Wolfson Physics of Semiconductor Devices 09 June 2009 Pages: 818 - 819
Scanning tunneling microscopy of the Si-SiO2 structure: the use of feedback fault conditions in surface studies V. M. KornilovA. N. LachinovV. A. Bespalov Fabrication, Treatment, and Testing of Materials and Structures 09 June 2009 Pages: 820 - 822
Relation between currents and charges measured in samples during diagnostics of inhomogeneous insulating films S. G. Dmitriev Fabrication, Treatment, and Testing of Materials and Structures 09 June 2009 Pages: 823 - 827
Low-temperature plasma pulsed deposition of thin films with nanoscale periodicity of properties A. A. SerdobintsevA. G. VeselovD. N. Bratashov Fabrication, Treatment, and Testing of Materials and Structures 09 June 2009 Pages: 828 - 831
