Abstract
Intersegment insulation in p—n-junction arrays based on high-resistivity silicon, which controls the interaction of neighboring elements of position-sensitive detectors, was studied. It was shown that current-voltage characteristics of the intersegment gap of the p—n junction deeply depleted due to an applied reverse voltage contain a portion of a step change in the current, which controls the intersegment insulation resistance. This feature is caused by the effect of switching of a small fraction of the bulk current between neighboring segments. In this case, the effect of the ohmic conductance between segments on the intersegment insulation resistance is ten times weaker than the effect of bulk current switching.
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Original Russian Text © V.K. Eremin, E.M. Verbitskaya, I.N. Ilyashenko, I.V. Eremin, N.N. Safonova, Yu.V. Tuboltsev, N.N. Egorov, S.A. Golubkov, K.A. Konkov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 6, pp. 825–829.
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Eremin, V.K., Verbitskaya, E.M., Ilyashenko, I.N. et al. Intersegment resistance in silicon p—n-Junction position-sensitive detectors. Semiconductors 43, 796–800 (2009). https://doi.org/10.1134/S1063782609060207
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DOI: https://doi.org/10.1134/S1063782609060207