Abstract
The detection properties of some short-channel field-effect transistors (FETs) have been analyzed using the steady-state output characteristics of these devices. The calculated dependences of voltage—power sensitivity on applied voltage are compared with the corresponding curves obtained from high-frequency measurements. It is shown that the nonmonotonic dependence of the FET photosensitivity on gate voltage that is observed in the frequency range of 400–750 GHz is not related to resonant excitation of 2D plasmons in the subgate plasma but is due to the change in the distribution of stationary fields in the structure and, as a result, to the change in the efficiency of nonresonant nonlinearity procedures in the transistor’s electron subsystem with an increase in the gate-channel voltage. This conclusion is confirmed by analysis of the frequency dependences of photoresponse in the range under consideration, which do not exhibit resonant behavior at the frequencies corresponding to the peaks in the curves measured at a fixed frequency and different gate voltages.
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Original Russian Text © M.L. Orlov, A.N. Panin, L.K. Orlov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 6, pp. 816–824.
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Orlov, M.L., Panin, A.N. & Orlov, L.K. Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors. Semiconductors 43, 787–795 (2009). https://doi.org/10.1134/S1063782609060190
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DOI: https://doi.org/10.1134/S1063782609060190