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Thin-film polycrystalline n-ZnO/p-CuO heterojunction

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.

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Correspondence to S. E. Kumekov.

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Original Russian Text © O.L. Lisitski, M.E. Kumekov, S.E. Kumekov, E.I. Terukov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 6, pp. 794–796.

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Lisitski, O.L., Kumekov, M.E., Kumekov, S.E. et al. Thin-film polycrystalline n-ZnO/p-CuO heterojunction. Semiconductors 43, 765–767 (2009). https://doi.org/10.1134/S1063782609060153

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  • DOI: https://doi.org/10.1134/S1063782609060153

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