1. AFM application for in situ study of adsorption processes

   • E. A. Sosnov
   • S. A. Belova
   • A. A. Malygin

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 495 - 497

2. AFM examination of nanolayers synthesised by the molecular layering method on the surface of manufacturing glasses

   • E. A. Sosnov
   • V. P. Dorofeev
   • G. L. Brusilovsky

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 498 - 501

3. Application of EBIV technique for investigation of electrophysical parameters of devices based on HTSC

   • S. V. Baryshev
   • A. V. Bobyl
   • O. P. Kostyleva

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 502 - 506

4. Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites

   • S. V. Trukhanov
   • L. S. Lobanovski
   • H. Szymczak

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 507 - 511

5. Cathodoluminescence properties of yttrium aluminum garnet doped with Eu²⁺ and Eu³⁺ ions

   • A. N. Trofimov
   • M. A. Petrova
   • M. V. Zamoryanskaya

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 512 - 515

6. Simulation of e-beam penetration through multilayer structures

   • S. S. Borisov
   • S. I. Zaitsev

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 516 - 520

7. Reconstruction of the InSb (111)In surface as a result of sulfur adsorption

   • M. V. Lebedev
   • M. Shimomura
   • Y. Fukuda

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 521 - 525

8. Alternating current conductivity and electron spin resonance of the Cd_{1 − x} Fe_xTe alloys

   • P. Zhukovski
   • Ya. Partyka
   • N. Lapchuk

   Electronic and Optical Properties of Semiconductors Pages: 526 - 530

9. Bistable amphoteric centers with reverse order of electron levels in semiconductors

   • A. G. Nikitina
   • V. V. Zuev

   Electronic and Optical Properties of Semiconductors Pages: 531 - 536

10. Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing

    • N. A. Sobolev
    • A. M. Emel’yanov
    • D. I. Tetel’baum

    Electronic and Optical Properties of Semiconductors Pages: 537 - 539

11. Specific features of electrical properties of the In_xGa_{1 − x} N alloy

    • T. A. Komissarova
    • N. N. Matrosov
    • S. V. Ivanov

    Electronic and Optical Properties of Semiconductors Pages: 540 - 541

12. Low-temperature (77 K) impurity breakdown in p-type 4H-SiC

    • I. V. Grekhov
    • P. A. Ivanov
    • T. P. Samsonova

    Electronic and Optical Properties of Semiconductors Pages: 542 - 545

13. Quasi-local states of Sn in Bi₂Te₃ according to the studies of galvanomagnetic effects in classical and quantizing magnetic fields

    • R. Laiho
    • S. A. Nemov
    • D. S. Dvornik

    Electronic and Optical Properties of Semiconductors Pages: 546 - 549

14. The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures

    • Z. D. Kovalyuk
    • P. G. Litovchenko
    • L. A. Polivtsev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 550 - 554

15. X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy

    • I. V. Rogozin
    • M. B. Kotlyarevsky

    Semiconductor Structures, Interfaces, and Surfaces Pages: 555 - 559

16. Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy

    • R. A. Zhachuk
    • S. A. Teys
    • B. Z. Olshanetsky

    Semiconductor Structures, Interfaces, and Surfaces Pages: 560 - 563

17. White electroluminescence from ZnO/GaN structures

    • I. E. Titkov
    • A. S. Zubrilov
    • I. V. Grekhov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 564 - 569

18. Anomalous electron spin splitting in InAs pumped by injection

    • Ya. V. Terent’ev
    • O. G. Lyublinskaya
    • S. V. Ivanov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 570 - 574

19. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

    • D. S. Sizov
    • E. E. Zavarin
    • A. F. Tsatsul’nikov

    Low-Dimensional Systems Pages: 575 - 589

20. Low-temperature recrystallization of Ge nanolayers on ZnSe

    • S. P. Suprun
    • E. V. Fedosenko

    Low-Dimensional Systems Pages: 590 - 595

21. Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields

    • V. L. Zerova
    • L. E. Vorob’ev
    • E. Towe

    Low-Dimensional Systems Pages: 596 - 605

22. Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots

    • A. E. Zhukov
    • A. R. Kovsh
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 606 - 611

23. Charge transport in detectors on the basis of gallium arsenide compensated with chromium

    • G. I. Ayzenshtat
    • M. A. Lelekov
    • O. P. Tolbanov

    Physics of Semiconductor Devices Pages: 612 - 615

24. Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus

    • N. A. Sobolev
    • A. M. Emel’yanov
    • E. I. Shek

    Physics of Semiconductor Devices Pages: 616 - 618