Abstract
Thin GaN films were grown on GaAs(111) substrates by radical-beam gettering epitaxy. The structural quality of the films was studied by high-resolution x-ray diffraction. The chemical composition of the GaAs surface and GaN film was studied by x-ray photoelectron spectroscopy. It is shown that Ga-N and As-N bonds are formed on the GaAs surface at initial growth stages at low temperatures. The state of the film-substrate interface was studied. It was found that prolonged annealing of GaN films in nitrogen radicals shifts the composition to nitrogen excess.
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Original Russian Text © I.V. Rogozin, M.B. Kotlyarevsky, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 5, pp. 575–579.
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Rogozin, I.V., Kotlyarevsky, M.B. X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy. Semiconductors 41, 555–559 (2007). https://doi.org/10.1134/S1063782607050156
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DOI: https://doi.org/10.1134/S1063782607050156