Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure S. S. KhludkovO. B. KoretskayaG. R. Burnashova Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 999 - 1001
Charge-carrier transport in annealed coarse-and fine-grained CdTe polycrystals Yu. V. KlevkovS. A. KolosovA. F. Plotnikov Electronic and Optical Properties of Semiconductors Pages: 1002 - 1006
Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity V. V. KrivolapchyukM. M. MezdroginaS. N. Rodin Electronic and Optical Properties of Semiconductors Pages: 1007 - 1015
Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons M. M. SychovE. V. KomarovV. P. Usacheva Electronic and Optical Properties of Semiconductors Pages: 1016 - 1020
Conductivity of Pb1−x SnxTe:In solid solutions in an ac electric field A. E. KozhanovA. V. NikorichD. R. Khokhlov Electronic and Optical Properties of Semiconductors Pages: 1021 - 1024
Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films P. A. Gentsar Electronic and Optical Properties of Semiconductors Pages: 1025 - 1027
Surface-barrier In/p-CuGa3Te5 and In/p-CuGa5Te8 structures: Fabrication and properties V. Yu. Rud’Yu. V. Rud’I. V. Bodnar’ Semiconductor Structures, Interfaces, and Surfaces Pages: 1028 - 1035
Tunneling emission of electrons from semiconductors’ valence bands in high electric fields V. D. KalganovN. V. MileshkinaE. V. Ostroumova Semiconductor Structures, Interfaces, and Surfaces Pages: 1036 - 1042
Point quantum contacts in disordered Si MOS structures with an inversion p-type channel: Nonlinear behavior of the system in the longitudinal and transverse electric fields A. S. VedeneevM. A. Feklisov Semiconductor Structures, Interfaces, and Surfaces Pages: 1043 - 1047
Effect of passivation of the p-CdTe surface in (NH4)2Sx on the current-voltage characteristics of contacts Yu. V. KlevkovS. A. KolosovA. F. Plotnikov Semiconductor Structures, Interfaces, and Surfaces Pages: 1048 - 1051
Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix Yu. V. RyabchikovP. A. ForshL. Tsybeskov Semiconductor Structures, Interfaces, and Surfaces Pages: 1052 - 1054
Mesoscopic fluctuations of conductance in a depleted built-in channel of a MOSFET B. A. AronzonA. S. VedeneevV. V. Ryl’kov Semiconductor Structures, Interfaces, and Surfaces Pages: 1055 - 1059
Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire V. P. Klad’koS. V. Chornen’kiiA. E. Belyaev Semiconductor Structures, Interfaces, and Surfaces Pages: 1060 - 1065
Investigation of electron properties of semiconductor surface by modulation spectroscopy of electroreflection P. A. GentsarA. I. Vlasenko Semiconductor Structures, Interfaces, and Surfaces Pages: 1066 - 1070
Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells P. V. PetrovYu. L. IvanovN. S. Averkiev Low-Dimensional Systems Pages: 1071 - 1074
The role of surface diffusion of adatoms in the formation of nanowire crystals V. G. DubrovskiĭN. V. SibirevJ. C. Harmand Low-Dimensional Systems Pages: 1075 - 1082
Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width N. V. TkachYu. A. Sety Low-Dimensional Systems Pages: 1083 - 1092
Spectra of nuclear quadrupole resonance in vitreous semiconductors I. P. KornevaN. Ya. SinyavskiĭB. Nogaj Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1093 - 1095
Spectrometric properties of SiC detectors based on ion-implanted p +-n junctions E. V. KalininaV. G. KossovG. F. Kholuyanov Physics of Semiconductor Devices Pages: 1096 - 1100
Room-temperature 1.3-μm lasing in a microdisk with quantum dots N. V. KryzhanovskayaS. A. BlokhinD. Bimberg Physics of Semiconductor Devices Pages: 1101 - 1104
Effect of stationary ionization of traps near the midgap on the spectrum of thermally stimulated capacitance of semiconductor devices S. V. BulyarskiĭA. V. ZhukovO. A. Trifonov Physics of Semiconductor Devices Pages: 1105 - 1108
Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness M. I. VexlerS. E. TyaginovI. V. Grekhov Physics of Semiconductor Devices Pages: 1109 - 1115
Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes S. A. MalyshevA. L. ChizhYu. G. Vasileuski Physics of Semiconductor Devices Pages: 1116 - 1121
