Abstract
Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.
Similar content being viewed by others
References
F. Koch and V. Petrova-Koch, J. Non-Cryst. Solids 198–200, 840 (1996).
H. Hanafi, S. Tiwari, and I. Khan, IEEE Trans. Electron Devices 43, 1553 (1996).
S. Tiwari, F. Rana, H. Hanafi, et al., Appl. Phys. Lett. 68, 1377 (1996).
I. Kim, H. Han, H. Kim, et al., in Proceedings of International Electron Devices Meeting (San Francisco, CA, 1998), Vol. 98, p. 111.
M. L. Brongersma, A. Polman, K. S. Min, et al., Appl. Phys. Lett. 72, 2577 (1998).
K. S. Zhuravlev, A. M. Gilinsky, and A. Yu. Kobitsky, Appl. Phys. Lett. 73, 2962 (1998).
T. Shimizu-Iwayama, D. E. Hole, and I. W. Boyd, J. Phys.: Condens. Matter 11, 6595 (1999).
L. Tsybeskov, G. F. Grom, R. Krishnan, et al., Europhys. Lett. 55, 552 (2001).
Y. Fu, M. Willander, A. Dutta, and S. Oda, Superlattices Microstruct. 28, 177 (2000).
T. Baron, P. Gentile, N. Magnea, and P. Mur, Appl. Phys. Lett. 79, 1175 (2001).
Y. Inoue, A. Tanaka, M. Fujii, et al., J. Appl. Phys. 92, 3199 (1999).
L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, et al., Appl. Phys. Lett. 72, 43 (1998).
A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, New York, 1963; Mir, Moscow, 1966).
N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979; Mir, Moscow, 1974).
M. H. Cohen, J. Non-Cryst. Solids 2, 432 (1970); J. Non-Cryst. Solids 4, 391 (1970).
B. De Salvo, P. Luthereau, T. Baron, et al., Microelectr. Reliab. 40, 863 (2000).
Author information
Authors and Affiliations
Additional information
Original Russian Text © Yu.V. Ryabchikov, P.A. Forsh, E.A. Lebedev, V.Yu. Timoshenko, P.K. Kashkarov, B.V. Kamenev, L. Tsybeskov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 9, pp. 1079–1081.
Rights and permissions
About this article
Cite this article
Ryabchikov, Y.V., Forsh, P.A., Lebedev, E.A. et al. Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix. Semiconductors 40, 1052–1054 (2006). https://doi.org/10.1134/S1063782606090119
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/S1063782606090119