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Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures.

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Original Russian Text © Yu.V. Ryabchikov, P.A. Forsh, E.A. Lebedev, V.Yu. Timoshenko, P.K. Kashkarov, B.V. Kamenev, L. Tsybeskov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 9, pp. 1079–1081.

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Ryabchikov, Y.V., Forsh, P.A., Lebedev, E.A. et al. Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix. Semiconductors 40, 1052–1054 (2006). https://doi.org/10.1134/S1063782606090119

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  • DOI: https://doi.org/10.1134/S1063782606090119

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