Abstract
Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidation of the Al0.97Ga0.03As layer which forms the microdisk base. In As/InGaAs QDs are used as the microdisk active region. Room-temperature lasing in the 1.3-μm range is observed, with the threshold optical pumping power of 160 μW. The quality factor of microdisk modes is about 104.
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Original Russian Text © N.V. Kryzhanovskaya, S.A. Blokhin, A.G. Gladyshev, N.A. Maleev, A.G. Kuz’menkov, E.M. Arakcheeva, E.M. Tanklevskaya, A.E. Zhukov, A.P. Vasil’ev, E.S. Semenova, M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, E. Stock, D. Bimberg, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 9, pp. 1128–1132.
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Kryzhanovskaya, N.V., Blokhin, S.A., Gladyshev, A.G. et al. Room-temperature 1.3-μm lasing in a microdisk with quantum dots. Semiconductors 40, 1101–1104 (2006). https://doi.org/10.1134/S106378260609020X
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DOI: https://doi.org/10.1134/S106378260609020X