Abstract
Single crystals of the ternary CuGa3Te5 and CuGa5Te8 ternary compounds are grown and their properties are studied. The photosensitive In/p-CuGa3Te5 and In/p-CuGa5Te8 structures were formed on homogeneous crystals for the first time. Photoelectric properties of new structures were studied and the parameters of the structures and of new semiconductors were determined; it is concluded that these structures can be used in broadband photoconverters of nonpolarized radiation.
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Original Russian Text © V.Yu. Rud’, Yu.V. Rud’, I.V. Bodnar’, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 9, pp. 1054–1061.
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Rud’, V.Y., Rud’, Y.V. & Bodnar’, I.V. Surface-barrier In/p-CuGa3Te5 and In/p-CuGa5Te8 structures: Fabrication and properties. Semiconductors 40, 1028–1035 (2006). https://doi.org/10.1134/S1063782606090077
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DOI: https://doi.org/10.1134/S1063782606090077