Doping of epitaxial layers and heterostructures based on HgCdTe K. D. MynbaevV. I. Ivanov-Omskiĭ Review Pages: 1 - 21
Relaxation of photoexcited silver chloride V. G. KlyuevYu. V. GerasimenkoN. I. Korobkina Electronic and Optical Properties of Semiconductors Pages: 22 - 26
Thermoelectric efficiency of single crystal semiconducting ruthenium silicide A. E. KrivosheevL. I. IvanenkoV. E. Borisenko Electronic and Optical Properties of Semiconductors Pages: 27 - 32
Dielectric properties of polycrystalline ZnS D. N. ShevarenkovA. F. Shchurov Electronic and Optical Properties of Semiconductors Pages: 33 - 35
A Mössbauer study of Eu donor centers in PbS É. S. Khuzhakulov Electronic and Optical Properties of Semiconductors Pages: 36 - 38
Effect of band inversion on the phonon spectra of the Hg1-x ZnxTe alloys L. K. Vodop’yanovI. V. KucherenkoR. Tribulet Electronic and Optical Properties of Semiconductors Pages: 39 - 42
A comparative analysis of the dissociation kinetics models for silane molecules on the surface at epitaxial growth, of silicon films, in vacuum L. K. OrlovT. N. Smyslova Semiconductor Structures, Interfaces, and Surfaces Pages: 43 - 49
Specific features of photoconductivity spectra of the CdTe/CdHgTe epitaxial graded-gap heterostructures A. I. VlasenkoZ. K. Vlasenko Semiconductor Structures, Interfaces, and Surfaces Pages: 50 - 54
Physical properties of SnO2 films subjected to incoherent pulsed radiation S. I. RembezaE. S. RembezaO. I. Borsyakova Semiconductor Structures, Interfaces, and Surfaces Pages: 55 - 58
Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons M. V. ZakharovV. A. KagadeiI. B. Khaibullin Semiconductor Structures, Interfaces, and Surfaces Pages: 59 - 63
Effect of γ-ray radiation on photosensitivity of ZnO/CuIn3Se5 heterojunctions B. Kh. BaĭramovI. V. Bodnar’M. V. Yakushev Semiconductor Structures, Interfaces, and Surfaces Pages: 64 - 66
Radiative recombination in Zn1-x MnxTe/Zn0.59Mg0.41Te quantum well structures: Exciton emission and intracenter luminescence V. F. AgekyanN. N. Vasil’evG. Karczewski Low-dimensional Systems Pages: 67 - 71
Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals G. A. KachurinS. G. CherkovaH. Becker Low-Dimensional Systems Pages: 72 - 78
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures G. G. TarasovZ. Ya. ZhuchenkoH. Kissel Low-Dimensional Systems Pages: 79 - 83
Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures A. V. Savel’evM. V. MaksimovR. P. Seĭsyan Low-Dimensional Systems Pages: 84 - 88
Precision of quantization of the hall conductivity in a finite-size sample: Power law A. A. GreshnovÉ. N. KolesnikovaG. G. Zegrya Low-dimensional Systems Pages: 89 - 93
Exciton characteristics and exciton luminescence of silicon quantum dot structures I. M. KupchakD. V. KorbutyakO. M. Sreseli Low-Dimensional Systems Pages: 94 - 103
Impedance spectroscopy of ultrafine-grain SnO2 ceramics with a variable grain size R. B. Vasil’evS. G. DorofeevA. M. Gas’kov Amorphous, Vitreous, and Porous Semiconductors Pages: 104 - 107
Hopping ε2 conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature I. P. ZvyaginI. A. KurovaN. N. Ormont Amorphous, Vitreous, and Porous Semiconductors Pages: 108 - 112
Effect of a rear contact on the electrical properties of the CdS/CdTe-based thin-film solar cells G. S. Khripunov Physics of Semiconductor Devices Pages: 113 - 117
Nonuniformity of carrier injection and the degradation of blue LEDs N. I. BochkarevaA. A. EfremovYu. G. Shreter Physics of Semiconductor Devices Pages: 118 - 123
