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Physical properties of SnO2 films subjected to incoherent pulsed radiation

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The results of studying the electrical properties of thin SnO2 films grown by reactive magnetron deposition are reported. The film crystallization under the exposure to intense incoherent pulsed radiation was studied using a UOL.P-1 commercial setup. It was shown that short pulsed annealing for fractions of second causes crystallization of the film and high gas sensitivity. It was found that the interaction of the polycrystalline film treated isothermally with gases is similar to that of films crystallized by pulsed annealing.

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Authors and Affiliations

  1. Voronezh State Technical University, Moskovskiĭ pr. 14, Voronezh, 394026, Russia

    S. I. Rembeza, T. V. Svistova & O. I. Borsyakova

  2. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    E. S. Rembeza

Authors
  1. S. I. Rembeza
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  2. E. S. Rembeza
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  3. T. V. Svistova
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  4. O. I. Borsyakova
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Additional information

Original Russian Text © S.I. Rembeza, E.S. Rembeza, T.V. Svistova, O.I. Borsyakova, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 1, pp. 57–60.

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Rembeza, S.I., Rembeza, E.S., Svistova, T.V. et al. Physical properties of SnO2 films subjected to incoherent pulsed radiation. Semiconductors 40, 55–58 (2006). https://doi.org/10.1134/S106378260601009X

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  • DOI: https://doi.org/10.1134/S106378260601009X

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