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Hopping ε2 conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature

  • Amorphous, Vitreous, and Porous Semiconductors
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Abstract

It is shown that the high-temperature annealing in hydrogen flow results in substantial modification of the temperature dependence of the conductivity of boron-doped and undoped a-Si:H films. For doped films subjected to annealing, the ε2 conductivity related to hopping between localized states near the valence-band edge appears in the intermediate temperature range, along with the contributions of the band conductivity and the variable-range hopping conductivity. The ε2 conductivity becomes possible due to an increase in the concentration of electrically active boron atoms and to the appreciable shift of the Fermi level after high-temperature annealing of doped films in hydrogen atmosphere. The experimentally measured parameters of the ε2 conductivity make it possible to determine the width of the energy region, in which the density of localized states near the valence band falls off nonexponentially.

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Authors and Affiliations

  1. Moscow State University (Physics Department), Moscow, 119992, Russia

    I. P. Zvyagin, I. A. Kurova, M. A. Nal’gieva & N. N. Ormont

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  1. I. P. Zvyagin
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  2. I. A. Kurova
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  3. M. A. Nal’gieva
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  4. N. N. Ormont
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Original Russian Text © I.P. Zvyagin, I.A. Kurova, M.A. Nal’gieva, N.N. Ormont, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 1, pp. 112–116.

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Zvyagin, I.P., Kurova, I.A., Nal’gieva, M.A. et al. Hopping ε2 conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature. Semiconductors 40, 108–112 (2006). https://doi.org/10.1134/S1063782606010192

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  • DOI: https://doi.org/10.1134/S1063782606010192

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