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Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si samples and further analysis of the local melting pattern can be an efficient tool for determining the number of defects introduced by the processing in atomic hydrogen. It was found that the processing conditions in atomic hydrogen with an exposure dose lower than 2.7 × 1017 cm−2 do not change the number of defects in Si; in contrast, conditions with an exposure dose above 3.6 × 1018 cm−2 significantly increase the defect density. The increase in the number of defects can be caused by the interaction of atomic hydrogen with the Si surface.

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References

  1. K. Sasaki, H. Tomoda, and T. Takada, Vacuum 51, 537 (1998).

    Google Scholar 

  2. S. M. Myers, M. I. Baskes, H. K. Birnbaum, et al., Rev. Mod. Phys. 64, 559 (1992).

    Article  ADS  Google Scholar 

  3. I. A. Aĭzenberg, I. R. Moskvina, S. V. Nosenko, et al., Poverkhnost: Fiz. Khim. Mekh., No. 11, 96 (1990).

  4. J. S. Montgomery, T. P. Schneider, R. J. Carter, and J. P. Barnak, Appl. Phys. Lett. 67, 2194 (1995).

    Article  ADS  Google Scholar 

  5. P. Asoka-Kumar, H. J. Stein, and K. G. Lynn, Appl. Phys. Lett. 64, 1684 (1994).

    Article  ADS  Google Scholar 

  6. S. J. Jeng, G. S. Oehrlein, and G. J. Scilla, Appl. Phys. Lett. 53, 1735 (1988).

    Article  ADS  Google Scholar 

  7. Ki-Hyun Hwang, Euijoon Yoon, Ki-Wong Whang, and Jeong Yong Lee, Appl. Phys. Lett. 67, 3590 (1995).

    ADS  Google Scholar 

  8. V. G. Bozhkov, V. A. Kagadeĭ, and N. A. Torkhov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1343 (1998) [Semiconductors 32, 1196 (1998)].

    Google Scholar 

  9. V. A. Kagadeĭ, E. F. Nefedtsev, D. I. Proskurovskiĭ, et al., Pis’ma Zh. Tekh. Fiz. 29 (1), 27 (2003) [Tech. Phys. Lett. 29, 12 (2003)].

    Google Scholar 

  10. V. A. Kagadeĭ, Yu. V. Lilenko, D. I. Proskurovskiĭ, and L. S. Shirokova, Pis’ma Zh. Tekh. Fiz. 26 (7), 1 (2000) [Tech. Phys. Lett. 26, 269 (2000)].

    Google Scholar 

  11. R. A. Ditizio, G. Liu, S. J. Fonash, et al., Appl. Phys. Lett. 56, 1140 (1990).

    Article  ADS  Google Scholar 

  12. T. Hsu, B. Anthony, R. Qian, et al., J. Electron. Mater. 20, 279 (1991).

    Google Scholar 

  13. S. I. Verkhodanov, N. N. Gerasimenko, and A. M. Myasnikov, Poverkhnost: Fiz. Khim. Mekh., No. 5, 69 (1998).

  14. V. I. Emel’yanov, P. K. Kashkarov, N. G. Chechenin, and T. Ditrikh, Fiz. Tverd. Tela 30, 2259 (1998) [Sov. Phys. Solid State 30, 1304 (1988)].

    Google Scholar 

  15. Ya. V. Fattakhov, R. M. Bayazitov, M. F. Galyautdinov, et al., Izv. Ross. Akad. Nauk, Ser. Fiz. 59 (12), 136 (1995).

    Google Scholar 

  16. V. A. Kagadei and D. I. Proskurovsky, J. Vac. Sci. Technol. A 16, 2556 (1998).

    Article  ADS  Google Scholar 

  17. Ya. V. Fattakhov, I. B. Khaĭbullin, R. M. Bayazitov, et al., Poverkhnost: Fiz. Khim. Mekh., No. 11, 61 (1989).

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Authors and Affiliations

  1. Zavoiskiĭ Physicotechnical Institute, Kazan Scientific Center, Russian Academy of Sciences, Sibirskiĭ trakt 10/7, Kazan 29, 420029, Tatarstan, Russia

    M. V. Zakharov, T. N. L’vova, Ya. V. Fattakhov & I. B. Khaibullin

  2. High Current Electronics Institute, Siberian Division, Russian Academy of Sciences, Akademicheskiĭ pr. 4, Tomsk, 634055, Russia

    V. A. Kagadei, E. V. Nefedtsev, K. V. Oskomov, D. I. Proskurovsky & S. V. Romanenko

Authors
  1. M. V. Zakharov
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  2. V. A. Kagadei
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  3. T. N. L’vova
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  4. E. V. Nefedtsev
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  5. K. V. Oskomov
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  6. D. I. Proskurovsky
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  7. S. V. Romanenko
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  8. Ya. V. Fattakhov
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  9. I. B. Khaibullin
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Additional information

Original Russian Text © M.V. Zakharov, V.A. Kagadei, T.N. L’vova, E.V. Nefedtsev, K.V. Oskomov, D.I. Proskurovsky, S.V. Romanenko, Ya.V. Fattakhov, I.B. Khaibullin, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 1, pp. 61–66.

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Zakharov, M.V., Kagadei, V.A., L’vova, T.N. et al. Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons. Semiconductors 40, 59–63 (2006). https://doi.org/10.1134/S1063782606010106

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  • DOI: https://doi.org/10.1134/S1063782606010106

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