Effect of highly nonequilibrium conditions on the stoichiometry of cadmium telluride layer obtained by vapor-phase condensation A. P. BelyaevV. P. RubetsI. P. Kalinkin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 617 - 619
Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron D. V. KilanovV. P. PopovR. Sholz Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 620 - 624
A model of reduction of oxidation-enhanced diffusion in heavily doped Si layers O. V. AleksandrovN. N. Afonin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 625 - 631
Defect profiling in semiconductor layers by the electrochemical method Á. NemcsicsJ. P. Makai Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 632 - 635
X-ray photoelectron spectroscopy and X-ray electron-microprobe analysis of single crystals based on bismuth telluride I. V. GasenkovaV. A. ChubarenkoT. E. Svechnikova Electronic and Optical Properties of Semiconductors Pages: 636 - 640
Photovoltaic effects in CdV2S4 single crystals and structures based on them A. A. VaipolinYu. A. NikolaevN. Fernelius Electronic and Optical Properties of Semiconductors Pages: 641 - 645
Electrical properties of cadmium telluride films synthesized in a thermal field with a temperature gradient A. P. BelyaevV. P. RubetsM. Yu. Nuzhdin Electronic and Optical Properties of Semiconductors Pages: 646 - 648
The effects of monovacancies on the terrace width during sublimation from the (111) surface of a diamond-like crystal A. V. ZverevI. G. NeizvestnyZ. Sh. Yanovitskaja Semiconductors Structures, Interfaces, and Surfaces Pages: 649 - 655
Fabrication and properties of ZnFe2S4 single crystals and structures based on them A. A. VaipolinYu. A. NikolaevN. Fernelius Semiconductors Structures, Interfaces, and Surfaces Pages: 656 - 660
Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure A. G. ZhdanN. F. KukharskayaG. V. Chucheva Semiconductors Structures, Interfaces, and Surfaces Pages: 661 - 666
Atomic-force-microscopy visualization of GeSi buried nanoislands on crystal cleavages in silicon structures M. S. DunaevskiiZ. F. Krasil’nikR. Laiho Semiconductors Structures, Interfaces, and Surfaces Pages: 667 - 674
Determination of the parameters of multilayer nanostructures using two-wave X-ray reflectometry N. L. PopovYu. A. UspenskiiYu. Ya. Platonov Low-Dimensional Systems Pages: 675 - 680
Superradiance in quantum heterostructures A. I. KlimovskayaYu. A. DrigaO. O. Pikaruk Low-Dimensional Systems Pages: 681 - 685
Electron transport in coupled quantum wells with double-Sided doping G. B. GalievV. E. KaminskiiA. V. Derkach Low-Dimensional Systems Pages: 686 - 691
Zero bias anomalies of transport characteristics of single-barrier GaAs/AlAs/GaAs heterostructures as a result of resonance tunneling between parallel two-dimensional electron gases and suppression of resonance tunneling in a magnetic field as a manifestation of the Coulomb gap in the tunnel density of states Yu. N. KhaninYu. V. DubrovskiiE. E. Vdovin Low-Dimensional Systems Pages: 692 - 698
Low-temperature anti-Stokes photoluminescence in CdSe/ZnSe nanostructures M. Ya. ValakhN. V. VuychikP. S. Kop’ev Low-Dimensional Systems Pages: 699 - 704
Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas A. A. SherstobitovG. M. MinkovA. A. Biryukov Low-Dimensional Systems Pages: 705 - 709
On the temperature dependence of the dc conductivity of a semiconductor quantum wire in an insulator N. A. PoklonskiiE. F. KislyakovS. A. Vyrko Low-Dimensional Systems Pages: 710 - 712
The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2 layers G. A. KachurinS. G. YanovskayaA. N. Mikhailov Low-Dimensional Systems Pages: 713 - 717
Interband absorption of light in semiconductor nanostructures S. I. Pokutnyi Low-Dimensional Systems Pages: 718 - 722
Modification of the nanostructure of diamond-like carbon films by bombardment with xenon ions I. A. FaizrakhmanovV. V. BazarovI. B. Khaibullin Amorphous, Vitreous, and Porous Semiconductors Pages: 723 - 726
Effect of illumination on the rate of relaxation of light-induced metastable states in a-Si:H(B) I. A. KurovaN. N. OrmontA. L. Gromadin Amorphous, Vitreous, and Porous Semiconductors Pages: 727 - 729
Efficient silicon light-emitting diode with temperature-stable spectral characteristics A. M. Emel’yanovN. A. SobolevS. Pizzini Physics of Semiconductor Devices Pages: 730 - 735
Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy S. V. IvanovK. D. MoiseevZh. I. Alferov Physics of Semiconductor Devices Pages: 736 - 739
