Abstract
Dependences of electrical conductivity σ on temperature and electric-field strength were studied in a wide range of conductivities (from σ ≪ e 2/ℏ to σ ≫ e 2/ℏ) in GaAs/InGaAs/GaAs structures with a two-dimensional electron gas. It is shown that one cannot reliably determine the mechanism of conductivity from the temperature dependence of ohmic conductivity. Studies of nonohmic conductivity make it possible to determine the range of values of low-temperature conductivity that correspond to the transition from the diffusion mechanism of conductivity to the hopping mechanism. It is shown that, in the structures under investigation, the conductivity is still controlled by diffusion as the degree of disorder increases even when the low-temperature conductivity is much lower than e 2/ℏ.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B. I. Shklovskii and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer, New York, 1984).
G. M. Minkov, O. E. Rut, A. V. Germanenko, et al., Phys. Rev. B 65, 235322 (2002).
D. Vollhardt and P. Woelfle, Phys. Rev. Lett. 45, 842 (1980); Phys. Rev. B 22, 4666 (1980).
B. L. Altshuler and A. G. Aronov, in Electron-Electron Interactions in Disordered Systems, Ed. by A. L. Efros and M. A. Pollak (North-Holland, Amsterdam, 1985), p. 1.
H. W. Jiang, C. E. Jonson, and K. L. Wang, Phys. Rev. B 46, 12830 (1992); T. Wang, K. P. Clark, G. F. Spenser, et al., Phys. Rev. Lett. 72, 709 (1994); C. H. Lee, Y. H. Chang, Y. W. Suen, and H. H. Lin, Phys. Rev. B 58, 10629 (1998); F. V. van Keuls, X. L. Hu, H. W. Jiang, and A. J. Dahm, Phys. Rev. B 56, 1161 (1997); H. W. Jiang, C. E. Johnson, K. L. Wang, and S. T. Hannahs, Phys. Rev. Lett. 71, 1439 (1993).
M. E. Gershenson, Yu. B. Khavin, D. Reuter, et al., Phys. Rev. Lett. 85, 1718 (2000).
S. Marnieros, L. Bergè, A. Juillard, and L. Dumoulin, Phys. Rev. Lett. 84, 2469 (2000).
P. J. Price, J. Appl. Phys. 53, 6863 (1982).
E. Chow, H. P. Wei, S. M. Girvin, and M. Shayegan, Phys. Rev. Lett. 77, 1143 (1996); D. V. Khveshchenko and M. Reizer, Phys. Rev. B 56, 15822 (1997).
I. G. Savel’ev, T. A. Polyanskaya, and Yu. V. Shmartsev, Fiz. Tekh. Poluprovodn. (Leningrad) 21, 2096 (1987) [Sov. Phys. Semicond. 21, 1271 (1987)].
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 6, 2003, pp. 730–734.
Original Russian Text Copyright © 2003 by Sherstobitov, Minkov, Rut, Germanenko, Zvonkov, Uskova, Biryukov.
Rights and permissions
About this article
Cite this article
Sherstobitov, A.A., Minkov, G.M., Rut, O.É. et al. Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas. Semiconductors 37, 705–709 (2003). https://doi.org/10.1134/1.1582539
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1582539