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Superradiance in quantum heterostructures

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Abstract

Dependences of spectra, intensity, and relaxation time of superradiance in GaAs/InxGa1−x As/GaAs quantum heterostructures on the excitation power density in the range of 1×10−3–1×106 W/cm2 are investigated. It is shown for the first time that filling of the quantum well affects all spectral characteristics of superradiance.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine

    A. I. Klimovskaya, Yu. A. Driga, E. G. Gule & O. O. Pikaruk

Authors
  1. A. I. Klimovskaya
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  2. Yu. A. Driga
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  3. E. G. Gule
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  4. O. O. Pikaruk
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 6, 2003, pp. 706–710.

Original Russian Text Copyright © 2003 by Klimovskaya, Driga, Gule, Pikaruk.

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Klimovskaya, A.I., Driga, Y.A., Gule, E.G. et al. Superradiance in quantum heterostructures. Semiconductors 37, 681–685 (2003). https://doi.org/10.1134/1.1582535

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  • DOI: https://doi.org/10.1134/1.1582535

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