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Effect of highly nonequilibrium conditions on the stoichiometry of cadmium telluride layer obtained by vapor-phase condensation

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The results of comparison studies of the stoichiometry of cadmium telluride epitaxial films synthesized from the vapor phase in equilibrium and highly nonequilibrium (on cooled substrates) conditions are reported. The data of X-ray microanalysis and atomic-absorption analysis of the films and the vapor phase are given. The stoichiometry of the films is found to increase with lowering the substrate temperature. It is shown that the films obtained in highly nonequilibrium conditions have the best crystal structure.

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Authors and Affiliations

  1. St. Petersburg Institute of Technology, Zagorodnyi pr. 49, St. Petersburg, 198013, Russia

    A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin & I. P. Kalinkin

Authors
  1. A. P. Belyaev
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  2. V. P. Rubets
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  3. M. Yu. Nuzhdin
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  4. I. P. Kalinkin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 6, 2003, pp. 641–643.

Original Russian Text Copyright © 2003 by Belyaev, Rubets, Nuzhdin, Kalinkin.

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Belyaev, A.P., Rubets, V.P., Nuzhdin, M.Y. et al. Effect of highly nonequilibrium conditions on the stoichiometry of cadmium telluride layer obtained by vapor-phase condensation. Semiconductors 37, 617–619 (2003). https://doi.org/10.1134/1.1582523

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  • DOI: https://doi.org/10.1134/1.1582523

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