Special features of structural defects in undoped CdTe textured ingots produced by free growth from a gasdynamic vapor flow Yu. V. KlevkovV. P. MartovitskiiS. A. Medvedev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 119 - 123
Self-organization of laser-induced point defects at the initial stages of inelastic photodeformation in germanium S. V. VintsentsA. V. ZaitsevaG. S. Plotnikov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 124 - 130
Photoinduced annealing of metastable defects in boron-doped a-Si:H films I. A. KurovaN. N. OrmontA. L. Gromadin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 131 - 133
Anomalies in static and dynamic conductivity of indium monoselenide G. V. LashkarevA. I. DmitrievA. A. Pronin Electronic and Optical Properties of Semiconductors Pages: 134 - 139
The U peak in the DLTS spectra of n-GaAs irradiated with fast neutrons and 65-MeV protons V. N. BrudnyiV. V. Peshev Electronic and Optical Properties of Semiconductors Pages: 140 - 144
Inversion of conductivity type in ZnSe single crystals obtained by the method of free growth Yu. F. VaksmanYu. A. NitsukP. V. Shapkin Electronic and Optical Properties of Semiconductors Pages: 145 - 147
Specific features of determination of the concentrations of shallow-level impurities in semiconductors from analysis of edge-luminescence spectra K. D. GlinchukA. V. Prokhorovich Electronic and Optical Properties of Semiconductors Pages: 148 - 155
Classification of frequencies of the Shubnikov-de Haas oscillations in layered charge-ordered crystals under magnetic breakdown P. V. Gorskyi Electronic and Optical Properties of Semiconductors Pages: 156 - 159
On the experimental data processing of magnetoresistance oscillations in two-dimensional electron gas N. S. AverkievA. M. MonakhovP. M. Koenraad Electronic and Optical Properties of Semiconductors Pages: 160 - 164
Electrical properties of FeIn2Se4 single crystals N. N. NiftievM. A. AlidzhanovM. B. Muradov Electronic and Optical Properties of Semiconductors Pages: 165 - 167
An impurity band in Hg3In2Te6 crystals doped with silicon P. N. GorleiO. G. Grushka Electronic and Optical Properties of Semiconductors Pages: 168 - 171
Electrical properties of the p +-Bi2Te3-p-GaSe isotype heterostructure S. I. DrapakV. A. ManassonZ. D. Kovalyuk Semiconductor Structures, Interfaces, and Surfaces Pages: 172 - 177
Fabrication and properties of photosensitive structures based on ZnIn2S4 single crystals A. A. VaipolinYu. A. NikolaevN. Fernelius Semiconductor Structures, Interfaces, and Surfaces Pages: 178 - 182
Charge transport in Fe-p-InP diode structures S. V. SlobodchikovKh. M. SalikhovB. E. Samorukov Semiconductor Structures, Interfaces, and Surfaces Pages: 183 - 186
Barrier formation in a heterostructure formed of native oxide and p-InSe. Electrical and photoelectrical properties S. I. DrapakV. B. OrletskiiV. V. Netyaga Semiconductor Structures, Interfaces, and Surfaces Pages: 187 - 193
Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy Yu. N. DrozdovN. V. Baidus’V. I. Shashkin Low-Dimensional Systems Pages: 194 - 199
Rashba effect in inversion and accumulation InAs layers V. F. RadantsevI. M. IvankivA. M. Yafyasov Low-Dimensional Systems Pages: 200 - 206
Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature T. M. BurbaevV. A. KurbatovN. N. Sibel’din Low-Dimensional Systems Pages: 207 - 209
Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix A. G. MakarovN. N. LedentsovP. Werner Low-Dimensional Systems Pages: 210 - 214
Population inversion between Γ subbands in quantum wells under the conditions of Γ-L intervalley transfer V. Ya. AleshkinA. A. AndronovA. A. Dubinov Low-Dimensional Systems Pages: 215 - 219
Synthesis of new carbon-nitrogen nanoclusters by annealing diamond-like carbon films in nitrogen I. A. FaizrakhmanovV. V. BazarovA. L. Stepanov Amorphous, Vitreous, and Porous Semiconductors Pages: 220 - 223
Effect of thermal annealing on optical and photoelectric properties of microcrystalline hydrogenated silicon films A. G. KazanskiiH. MellP. A. Forsh Amorphous, Vitreous, and Porous Semiconductors Pages: 224 - 226
Electrical properties of surface-barrier diodes based on CdZnTe L. A. KosyachenkoI. M. RarenkoE. L. Maslyanchuk Physics of Semiconductor Devices Pages: 227 - 232
Internal quantum efficiency of stimulated emission of (λ=1.55 µm) InGaAsP/InP laser diodes G. V. SkrynnikovG. G. ZegryaI. S. Tarasov Physics of Semiconductor Devices Pages: 233 - 238
