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Charge transport in Fe-p-InP diode structures

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The mechanism of charge transport in Fe-p-InP diode structures and its dependences on illumination and magnetic field were investigated. It is shown that a double injection in a drift approximation into a high-resistivity π-layer is the main mechanism of charge transport. Phenomena of the suppression of a forward current with light (negative photoresponse) and a sharp increase in the differential resistance in a magnetic field are observed and discussed.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. V. Slobodchikov, Kh. M. Salikhov & B. E. Samorukov

Authors
  1. S. V. Slobodchikov
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  2. Kh. M. Salikhov
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  3. B. E. Samorukov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 2, 2003, pp. 192–195.

Original Russian Text Copyright © 2003 by Slobodchikov, Salikhov, Samorukov.

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Slobodchikov, S.V., Salikhov, K.M. & Samorukov, B.E. Charge transport in Fe-p-InP diode structures. Semiconductors 37, 183–186 (2003). https://doi.org/10.1134/1.1548662

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  • DOI: https://doi.org/10.1134/1.1548662

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