Abstract
The structural features of undoped CdTe ingots grown in a gasdynamic flow at 620°C were studied by selective etching and X-ray diffractometry. It is found that the samples grown at a deposition rate of up to 500 µm/h consist of independently growing rods with both [111] A and [111] B directions. This indicates that the vapor composition in the growth region is almost stoichiometric. Both rod types exhibited transverse striations due to rotation twins. The twin boundaries in rods with the growth direction [111] A were shown to be also small-angle boundaries with additional misorientation of separate twins of 0.2°–0.3°.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 2, 2003, pp. 129–133.
Original Russian Text Copyright © 2003 by Klevkov, Martovitskii, Medvedev.
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Klevkov, Y.V., Martovitskii, V.P. & Medvedev, S.A. Special features of structural defects in undoped CdTe textured ingots produced by free growth from a gasdynamic vapor flow. Semiconductors 37, 119–123 (2003). https://doi.org/10.1134/1.1548649
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DOI: https://doi.org/10.1134/1.1548649