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Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature

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Abstract

The low-temperature (T=2 K) photoluminescence (PL) has been studied in Si/Ge structures grown by MBE at a low (250–350°C) temperature of Ge deposition. The luminescence spectra change dramatically when the average thickness of the Ge layer exceeds six monolayers. In this case, the PL line from the pseudomorphic layer (quantum well) retains its spectral position and increases in intensity at the expense of the luminescence line from islands (quantum dots), which then totally fades. The data obtained indicate a considerable difference between the epitaxial growth modes dominating in low and conventional (500–700°C) temperature ranges.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev & N. N. Sibel’din

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  1. T. M. Burbaev
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  2. V. A. Kurbatov
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  3. A. O. Pogosov
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  4. M. M. Rzaev
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  5. N. N. Sibel’din
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 2, 2003, pp. 216–218.

Original Russian Text Copyright © 2003 by Burbaev, Kurbatov, Pogosov, Rzaev, Sibel’din.

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Burbaev, T.M., Kurbatov, V.A., Pogosov, A.O. et al. Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature. Semiconductors 37, 207–209 (2003). https://doi.org/10.1134/1.1548666

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  • DOI: https://doi.org/10.1134/1.1548666

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