Spatially inhomogeneous oxygen precipitation in silicon S. V. BulyarskiiV. V. SvetukhinO. V. Prikhod’ko Atomic Structure and Non-Electronic Properties of Semiconductor Pages: 1157 - 1162
Enhanced formation of thermal donors in irradiated germanium: Local vibrational mode spectroscopy A. A. KlechkoV. V. LitvinovL. I. Murin Atomic Structure and Non-Electronic Properties of Semiconductor Pages: 1163 - 1165
Radiation defects in semiconductors under hydrostatic pressure V. N. Brudnyi Electronic and Optical Properties of Semiconductors Pages: 1166 - 1170
Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge A. I. VlasenkoZ. K. VlasenkoA. V. Lyubchenko Electronic and Optical Properties of Semiconductors Pages: 1171 - 1174
The electron density of semiconductors with charged dislocations placed in external fields Z. A. Veliev Electronic and Optical Properties of Semiconductors Pages: 1175 - 1177
Activation of impurities in ZnSe crystals, stimulated by a laser shock wave A. BaidullaevaA. I. VlasenkoP. E. Mozol’ Electronic and Optical Properties of Semiconductors Pages: 1178 - 1181
Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures A. V. SubashievYu. A. MamaevV. K. Kalevich Electronic and Optical Properties of Semiconductors Pages: 1182 - 1187
Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC V. S. Ballandovich Electronic and Optical Properties of Semiconductors Pages: 1188 - 1192
Physical properties of CdGeAs2 crystals grown by solid-state synthesis V. Yu. Rud’Yu. V. Rud’T. N. Ushakova Electronic and Optical Properties of Semiconductors Pages: 1193 - 1195
Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain N. S. AverkievA. A. GutkinM. A. Reshchikov Electronic and Optical Properties of Semiconductors Pages: 1196 - 1201
Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures E. F. VengerÉ. B. KaganovichS. V. Svechnikov Semiconductor Structures, Interfaces and Surfaces Pages: 1202 - 1205
Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers K. V. VasilevskiiS. V. RendakovaK. Zekentes Semiconductor Structures, Interfaces and Surfaces Pages: 1206 - 1211
Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si/SiO2 interface N. I. BochkarevaS. A. Khorev Semiconductor Structures, Interfaces and Surfaces Pages: 1212 - 1215
Statistical delay of microplasma breakdown in GaP p-n junctions S. V. BulyarskiiYu. N. SerëzhkinV. K. Ionychev Semiconductor Structures, Interfaces and Surfaces Pages: 1216 - 1220
On the transformation of the potential barrier at a GaAs/Au interface during heat treatment B. I. Bednyi Semiconductor Structures, Interfaces and Surfaces Pages: 1221 - 1224
Absorption of a strong electromagnetic wave by electrons in a superlattice in a quantizing electric field D. V. Zav’yalovS. V. Kryuchkov Low-Dimensional Systems Pages: 1225 - 1228
X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots N. N. FaleevA. Yu. EgorovY. Takeda Low-Dimensional Systems Pages: 1229 - 1237
Quantum Hall effect in a single-mode wire Z. D. KvonE. B. Ol’shanestkiiJ. C. Portal Low-Dimensional Systems Pages: 1238 - 1240
Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices D. G. KipshidzeH. P. SchenkJ. Kräusslich Low-Dimensional Systems Pages: 1241 - 1246
Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water B. R. Dzhumaev Amorphous, Glassy, and Porous Semiconductors Pages: 1247 - 1250
Conductivity and absorption edge of amorphous silicyne A. I. MashinA. F. Khokhlov Amorphous, Glassy, and Porous Semiconductors Pages: 1251 - 1253
Classification of single-electron devices I. I. AbramovE. G. Novik The Physics of Semiconductor Devices Pages: 1254 - 1259
Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states A. E. ZhukovA. R. KovshV. M. Ustinov The Physics of Semiconductor Devices Pages: 1260 - 1264