Abstract
An analysis has been performed of photoconductivity spectral characteristics of semiconductors with an exponential fundamental absorption edge as functions of the surface recombination rate and sample thickness. It is shown, in particular, that in crystals of CdxHg1−x Te (x≈0.2) the spectral position of the photoconductivity maximum over a wide range of values of these parameters can be used, with an error not exceeding 1%, to determine the effective band gap and, consequently, the composition of the material.
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Fiz. Tekh. Poluprovodn. 33, 1295–1299 (November 1999)
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Vlasenko, A.I., Vlasenko, Z.K. & Lyubchenko, A.V. Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge. Semiconductors 33, 1171–1174 (1999). https://doi.org/10.1134/1.1187842
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DOI: https://doi.org/10.1134/1.1187842