Abstract
The optical orientation of electron spins in heavily doped, strained GaAs/GaAsP layers with a deformation-split valence band is studied experimentally. The observed polarized luminescence spectra and polarized photoemission (electron emission) spectra are shown to be described well by a model which allows for smearing of the edges of the bands by the fluctuation potential due to impurities, degeneracy of the carriers at low temperatures, and indirect electron-phonon optical transitions. The dominant mechanism of electron spin relaxation in strained layers is found to be the Bir-Aronov-Pikus mechanism. The parameters of the fluctuation potential and the parameters governing carrier spin relaxation are determined.
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Fiz. Tekh. Poluprovodn. 33, 1307–1313 (November 1999)
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Subashiev, A.V., Mamaev, Y.A., Oskotskii, B.D. et al. Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures. Semiconductors 33, 1182–1187 (1999). https://doi.org/10.1134/1.1187845
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DOI: https://doi.org/10.1134/1.1187845