1. Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

   • N. A. Bert
   • A. A. Suvorova
   • R. Werner

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 683 - 688

2. Features of the electrical compensation of bismuth impurities in PbSe

   • S. A. Nemov
   • T. A. Gavrikova
   • V. I. Proshin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 689 - 691

3. Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

   • V. V. Chaldyshev
   • A. E. Kunitsyn
   • B. R. Semyagin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 692 - 695

4. Stabilization of the physical properties of Cd_xHg_1−x Se solid solutions doped with iron

   • O. S. Romanyuk
   • S. Yu. Paranchich
   • V. N. Makogonenko

   Electronic and Optical Properties of Semiconductors Pages: 696 - 699

5. Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host

   • S. D. Darchuk
   • L. A. Korovina
   • M. Sawicki

   Electronic and Optical Properties of Semiconductors Pages: 700 - 703

6. Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

   • K. S. Zhuravlev
   • T. S. Shamirzaev
   • N. A. Yakusheva

   Electronic and Optical Properties of Semiconductors Pages: 704 - 710

7. Calculation of the energy levels of shallow acceptors in uniaxially strained germanium

   • M. A. Odnoblyudov
   • V. M. Chistyakov

   Electronic and Optical Properties of Semiconductors Pages: 711 - 713

8. Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors

   • L. P. Kazakova
   • É. A. Lebedev

   Electronic and Optical Properties of Semiconductors Pages: 714 - 715

9. Donorlike behavior of rare-earth impurities in PbTe

   • G. T. Alekseeva
   • M. V. Vedernikov
   • Yu. I. Ravich

   Electronic and Optical Properties of Semiconductors Pages: 716 - 719

10. Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level

    • M. V. Alekseenko
    • A. G. Zabrodskii
    • L. M. Shterengas

    Electronic and Optical Properties of Semiconductors Pages: 720 - 728

11. Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown

    • K. M. Jandieri
    • V. S. Kachlishvili

    Electronic and Optical Properties of Semiconductors Pages: 729 - 733

12. Preparation and properties of GeS₂ single crystals

    • A. V. Golubkov
    • G. B. Dubrovskii
    • A. I. Shelykh

    Electronic and Optical Properties of Semiconductors Pages: 734 - 735

13. Photovoltaic effect in In/I-III-VI₂-thin-film surface-barrier structures

    • V. Yu. Rud’
    • Yu. V. Rud’
    • S. L. Sergeev-Nekrasov

    Electronic and Optical Properties of Semiconductors Pages: 736 - 738

14. Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts

    • A. N. Andreev
    • M. G. Rastegaeva
    • S. A. Reshanov

    Semiconductor Structures, Interfaces and Surfaces Pages: 739 - 744

15. Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices

    • I. I. Reshina
    • R. Planel’

    Semiconductor Structures, Interfaces and Surfaces Pages: 745 - 748

16. Theoretical study of the threshold characteristics of InGaN multiquantum well lasers

    • G. G. Zegrya
    • N. A. Gun’ko

    Low-Dimensional Systems Pages: 749 - 753

17. Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field

    • L. E. Vorob’ev
    • E. A. Zibik
    • I. I. Saidashev

    Low-Dimensional Systems Pages: 754 - 756

18. Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells

    • L. E. Vorob’ev
    • I. E. Titkov
    • E. Towe

    Low-Dimensional Systems Pages: 757 - 761

19. Light absorption in aperiodic PbS/C superlattices in an electric field

    • S. F. Musikhin
    • V. I. Il’in
    • L. V. Sharonova

    Low-Dimensional Systems Pages: 762 - 764

20. Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction

    • V. P. Evtikhiev
    • V. E. Tokranov
    • M. Ichida

    Low-Dimensional Systems Pages: 765 - 769

21. Scattering of hot electrons by neutral acceptors in GaAs/AlAs quantum well structures

    • D. N. Mirlin
    • V. I. Perel’
    • I. I. Reshina

    Low-Dimensional Systems Pages: 770 - 778

22. Defects and short-and medium-range order in the structural network of hydrogenated amorphous silicon

    • O. A. Golikova
    • V. Kh. Kudoyarova

    Low-Dimensional Systems Pages: 779 - 781

23. Effect of deposition and annealing conditions on the optical properties of amorphous silicon

    • A. I. Mashin
    • A. V. Ershov
    • D. A. Khokhlov

    Low-Dimensional Systems Pages: 782 - 784

24. Temperature dependence of the reverse current in Schottky barrier diodes

    • P. A. Pipinis
    • A. K. Rimeika
    • V. A. Lapeika

    Physics of Semiconductor Devices Pages: 785 - 788

25. Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p-n junctions

    • V. B. Voronkov
    • E. G. Guk
    • V. B. Shuman

    Physics of Semiconductor Devices Pages: 789 - 791

26. Pulsed investigations of diode structures based on silicon-hydrogen films

    • S. V. Belov
    • A. A. Lebedev

    Physics of Semiconductor Devices Pages: 792 - 794

27. Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm

    • A. E. Zhukov
    • A. Yu. Egorov
    • P. S. Kop’ev

    Physics of Semiconductor Devices Pages: 795 - 797