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Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells

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Abstract

Variation of the absorption coefficient and refractive index of a system of tunnel-coupled GaAs/AlGaAs quantum wells in a longitudinal electric field is discovered and investigated in the spectral region corresponding to intersubband electron transitions. The phenomena observed are explained by electron heating in the electric field and electron transfer in physical space. The equilibrium absorption spectra at lattice temperatures of 80 and 295 K are presented.

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Authors and Affiliations

  1. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    L. E. Vorob’ev, I. E. Titkov, D. A. Firsov & V. A. Shalygin

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Toropov & T. V. Shubina

  3. Donbass State Mechanical Engineering Academy, 343913, Kramatorsk, Ukraine

    V. N. Tulupenko

  4. Laboratory for Optics and Quantum Electronics, Thornton Hall, University of Virginia, Charlottesville, Virginia, 22903-2442, USA

    E. Towe

Authors
  1. L. E. Vorob’ev
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  2. I. E. Titkov
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  3. D. A. Firsov
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  4. V. A. Shalygin
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  5. A. A. Toropov
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  6. T. V. Shubina
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  7. V. N. Tulupenko
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  8. E. Towe
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Additional information

Fiz. Tekh. Poluprovodn. 32, 852–856 (July 1998)

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Vorob’ev, L.E., Titkov, I.E., Firsov, D.A. et al. Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells. Semiconductors 32, 757–761 (1998). https://doi.org/10.1134/1.1187500

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  • DOI: https://doi.org/10.1134/1.1187500

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