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Defects and short-and medium-range order in the structural network of hydrogenated amorphous silicon

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Abstract

The effect of defects (dangling Si-Si bonds) produced during the deposition of a-Si:H films by the glow-discharge method and upon boron doping, as well as photoinduced defects, on changes in the short-and medium-range order in the structural network is investigated. It is shown for a constant defect density N D=const that charged defects influence the a-Si:H structure much more strongly than do neutral defects.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    O. A. Golikova & V. Kh. Kudoyarova

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  1. O. A. Golikova
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  2. V. Kh. Kudoyarova
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Fiz. Tekh. Poluprovodn. 32, 876–878 (July 1998)

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Golikova, O.A., Kudoyarova, V.K. Defects and short-and medium-range order in the structural network of hydrogenated amorphous silicon. Semiconductors 32, 779–781 (1998). https://doi.org/10.1134/1.1187504

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  • DOI: https://doi.org/10.1134/1.1187504

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