Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a=11.45 Å, b=16.09 Å, c=6.7 Å, and β=91°. The reflection and transmission spectra are measured in the region of the absorption edge. The gap width is found to be equal to 3.2 eV.
Reflection Crystallization Magnetic Material Chemical Vapor Transmission Spectrum
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