Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types L. A. KazakevichP. F. Lugakov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 117 - 119
Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation L. I. KhirunenkoV. I. ShakhovtsovV. V. Shumov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 120 - 122
Diffusion doping of undoped hydrogenated amorphous silicon with tin G. S. KulikovK. Kh. Khodzhaev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 123 - 123
Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone A. N. AndronovS. V. RobozerovL. E. Klyachkin Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 124 - 130
Exciton characteristics of intercalated TlGaSe2 single crystal S. N. MustafaevaE. M. KerimovaN. Z. Gasanov Electronic and Optical Properties of Semiconductors Pages: 131 - 132
Deformation potentials of the Γ(000) band extrema in CdGa2S4 T. G. KerimovaSh. S. MamedovI. A. Mamedova Electronic and Optical Properties of Semiconductors Pages: 133 - 135
Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices A. S. AblitsovaV. F. AgekyanA. Yu. Serov Electronic and Optical Properties of Semiconductors Pages: 136 - 139
Excited states of chalcogen ions in germanium A. Yu. UshakovR. M. ShterengasN. B. Radchuk Electronic and Optical Properties of Semiconductors Pages: 140 - 143
Self-compensation in CdTe〈Cl〉 in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor O. A. MatveevA. I. Terent’ev Electronic and Optical Properties of Semiconductors Pages: 144 - 147
Negative dynamic differential conductivity at the cyclotron frequency in Ga1−x AlxAs under conditions of ballistic intervalley electron transfer G. É. DzamukashviliZ. S. KachlishviliN. K. Metreveli Electronic and Optical Properties of Semiconductors Pages: 148 - 153
The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence G. N. IvanovaV. A. KasiyanS. V. Oprya Electronic and Optical Properties of Semiconductors Pages: 154 - 159
The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence G. N. IvanovaV. A. KasiyanA. V. Simashkevich Electronic and Optical Properties of Semiconductors Pages: 160 - 163
Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers I. A. KarpovichM. V. Stepikhova Semiconductor Structures, Interfaces and Surfaces Pages: 164 - 168
Transient current in amorphous, porous semiconductor-crystalline semiconductor structures L. P. KazakovaE. A. Lebedev Semiconductor Structures, Interfaces and Surfaces Pages: 169 - 173
Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse B. A. AronzonD. Yu. KovalevV. V. Ryl’kov Semiconductor Structures, Interfaces and Surfaces Pages: 174 - 180
Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes Yu. A. GoldbergE. A. Posse Semiconductor Structures, Interfaces and Surfaces Pages: 181 - 183
Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels B. I. Reznikov Semiconductor Structures, Interfaces and Surfaces Pages: 184 - 188
Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures V. N. OvsyukM. A. Dem’yanenkoA. I. Toropov Low-Dimensional Systems Pages: 189 - 194
Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs T. I. VoroninaT. S. LagunovaYu. P. Yakovlev Low-Dimensional Systems Pages: 195 - 200
Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors V. V. OsipovA. Yu. SelyakovM. Foygel Low-Dimensional Systems Pages: 201 - 205
Lateral traveling wave as a type of transient process in a resonant-tunneling structure D. V. Mel’nikovA. I. Podlivaev Low-Dimensional Systems Pages: 206 - 212
The structure of porous gallium phosphide T. N. ZavaritskayaA. V. KvitV. A. Karavanskii Amorphous, Glassy, and Porous Semiconductors Pages: 213 - 217
InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K) T. N. DanilovaA. P. DanilovaYu. P. Yakovlev Amorphous, Glassy, and Porous Semiconductors Pages: 218 - 221
Gamma-induced metastable states of doped, amorphous, hydrated silicon M. S. AblovaG. S. KulikovS. K. Persheev Amorphous, Glassy, and Porous Semiconductors Pages: 222 - 224
Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate A. S. KyuregyanS. N. Yurkov The Physics of Semiconductor Devices Pages: 225 - 229
