Abstract
An investigation of the influence of germanium doping (⩽1 at. %) on the formation efficiency of the main secondary radiation defects in silicon under low-temperature (T⩽90 K) electron irradiation has been carried out. The significant decrease of the formation efficiency of A and V 2 centers in Si〈Ge〉 is explained by assuming that the germanium atoms are indirect recombination centers of primary radiation defects (V and I) in Si〈Ge〉.
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Fiz. Tekh. Poluprovodn. 32, 132–134 (February 1998)
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Khirunenko, L.I., Shakhovtsov, V.I. & Shumov, V.V. Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation. Semiconductors 32, 120–122 (1998). https://doi.org/10.1134/1.1187329
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DOI: https://doi.org/10.1134/1.1187329