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InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)

  • Amorphous, Glassy, and Porous Semiconductors
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Abstract

We have produced, by using liquid-phase epitaxy, 2.7 to 3.0-µm lasers based on InAsSbP double-heterostructures with different phosphorus contents in the active and wide-gap regions. The lasers possess threshold current density ∼0.8 kA/cm2 at 77 K and operate in the pulsed mode up to ∼124 K with maximum threshold current density 10–12 kA/cm2. The lasers have a low series resistance ∼0.45 Ω.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev & Yu. P. Yakovlev

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  1. T. N. Danilova
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  2. A. P. Danilova
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  3. O. G. Ershov
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  4. A. N. Imenkov
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  5. M. V. Stepanov
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  6. V. V. Sherstnev
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  7. Yu. P. Yakovlev
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Additional information

Fiz. Tekh. Poluprovodn. 32, 241–244 (February 1998)

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Danilova, T.N., Danilova, A.P., Ershov, O.G. et al. InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K). Semiconductors 32, 218–221 (1998). https://doi.org/10.1134/1.1187345

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  • DOI: https://doi.org/10.1134/1.1187345

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