1. Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types

   • L. A. Kazakevich
   • P. F. Lugakov

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 117 - 119

2. Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation

   • L. I. Khirunenko
   • V. I. Shakhovtsov
   • V. V. Shumov

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 120 - 122

3. Diffusion doping of undoped hydrogenated amorphous silicon with tin

   • G. S. Kulikov
   • K. Kh. Khodzhaev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 123 - 123

4. Ultrashallow p ⁺-n junctions in silicon (100): Electron-beam diagnostics of the surface zone

   • A. N. Andronov
   • S. V. Robozerov
   • L. E. Klyachkin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 124 - 130

5. Exciton characteristics of intercalated TlGaSe₂ single crystal

   • S. N. Mustafaeva
   • E. M. Kerimova
   • N. Z. Gasanov

   Electronic and Optical Properties of Semiconductors Pages: 131 - 132

6. Deformation potentials of the Γ(000) band extrema in CdGa₂S₄

   • T. G. Kerimova
   • Sh. S. Mamedov
   • I. A. Mamedova

   Electronic and Optical Properties of Semiconductors Pages: 133 - 135

7. Optical spectra of microcrystals of the layered semiconductor PbI₂ grown in glass matrices

   • A. S. Ablitsova
   • V. F. Agekyan
   • A. Yu. Serov

   Electronic and Optical Properties of Semiconductors Pages: 136 - 139

8. Excited states of chalcogen ions in germanium

   • A. Yu. Ushakov
   • R. M. Shterengas
   • N. B. Radchuk

   Electronic and Optical Properties of Semiconductors Pages: 140 - 143

9. Self-compensation in CdTe〈Cl〉 in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor

   • O. A. Matveev
   • A. I. Terent’ev

   Electronic and Optical Properties of Semiconductors Pages: 144 - 147

10. Negative dynamic differential conductivity at the cyclotron frequency in Ga_1−x Al_xAs under conditions of ballistic intervalley electron transfer

    • G. É. Dzamukashvili
    • Z. S. Kachlishvili
    • N. K. Metreveli

    Electronic and Optical Properties of Semiconductors Pages: 148 - 153

11. The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence

    • G. N. Ivanova
    • V. A. Kasiyan
    • S. V. Oprya

    Electronic and Optical Properties of Semiconductors Pages: 154 - 159

12. The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence

    • G. N. Ivanova
    • V. A. Kasiyan
    • A. V. Simashkevich

    Electronic and Optical Properties of Semiconductors Pages: 160 - 163

13. Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers

    • I. A. Karpovich
    • M. V. Stepikhova

    Semiconductor Structures, Interfaces and Surfaces Pages: 164 - 168

14. Transient current in amorphous, porous semiconductor-crystalline semiconductor structures

    • L. P. Kazakova
    • E. A. Lebedev

    Semiconductor Structures, Interfaces and Surfaces Pages: 169 - 173

15. Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

    • B. A. Aronzon
    • D. Yu. Kovalev
    • V. V. Ryl’kov

    Semiconductor Structures, Interfaces and Surfaces Pages: 174 - 180

16. Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes

    • Yu. A. Goldberg
    • E. A. Posse

    Semiconductor Structures, Interfaces and Surfaces Pages: 181 - 183

17. Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels

    • B. I. Reznikov

    Semiconductor Structures, Interfaces and Surfaces Pages: 184 - 188

    

18. Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures

    • V. N. Ovsyuk
    • M. A. Dem’yanenko
    • A. I. Toropov

    Low-Dimensional Systems Pages: 189 - 194

19. Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs

    • T. I. Voronina
    • T. S. Lagunova
    • Yu. P. Yakovlev

    Low-Dimensional Systems Pages: 195 - 200

20. Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors

    • V. V. Osipov
    • A. Yu. Selyakov
    • M. Foygel

    Low-Dimensional Systems Pages: 201 - 205

21. Lateral traveling wave as a type of transient process in a resonant-tunneling structure

    • D. V. Mel’nikov
    • A. I. Podlivaev

    Low-Dimensional Systems Pages: 206 - 212

22. The structure of porous gallium phosphide

    • T. N. Zavaritskaya
    • A. V. Kvit
    • V. A. Karavanskii

    Amorphous, Glassy, and Porous Semiconductors Pages: 213 - 217

23. InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)

    • T. N. Danilova
    • A. P. Danilova
    • Yu. P. Yakovlev

    Amorphous, Glassy, and Porous Semiconductors Pages: 218 - 221

24. Gamma-induced metastable states of doped, amorphous, hydrated silicon

    • M. S. Ablova
    • G. S. Kulikov
    • S. K. Persheev

    Amorphous, Glassy, and Porous Semiconductors Pages: 222 - 224

25. Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate

    • A. S. Kyuregyan
    • S. N. Yurkov

    The Physics of Semiconductor Devices Pages: 225 - 229