1. The history and future of semiconductor heterostructures

   • Zh. I. Alferov

   Review Pages: 1 - 14

2. Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon

   • O. V. Aleksandrov
   • N. N. Afonin

   Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 15 - 18

3. High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

   • N. N. Faleev
   • V. V. Chaldyshev
   • B. R. Semyagin

   Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 19 - 25

4. Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation

   • V. N. Babentsov
   • N. I. Tarbaev

   Electronic and Optical Properties of Semiconductors Pages: 26 - 28

5. Filling of dislocation levels in strong electric fields

   • Z. A. Veliev

   Electronic and Optical Properties of Semiconductors Pages: 29 - 30

6. Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te

   • V. I. Dubovik
   • V. A. Bogdanova
   • O. A. Shutyak

   Electronic and Optical Properties Semiconductors Pages: 31 - 32

7. Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation

   • A. A. Gutkin
   • M. A. Reshchikov
   • J. Pultorak

   Electronic and Optical Properties Semiconductors Pages: 33 - 39

8. Intrinsic defect states in PbTe single-crystal films grown by laser-modulated epitaxy

   • S. V. Plyatsko

   Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 40 - 42

9. Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt

   • K. S. Zhuravlev
   • T. S. Shamirzaev
   • N. A. Yakusheva

   Electronic and Optical Properties Semiconductors Pages: 43 - 48

10. Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg_1−x Mn_xTe_1−y Se_y

    • V. A. Kulbachinskii
    • I. A. Churilov
    • R. A. Lunin

    Electronic and Optical Properties Semiconductors Pages: 49 - 51

11. On C-V profiling near an isotypic heterojunction

    • V. I. Zubkov
    • M. A. Melnik
    • A. V. Solomonov

    Semiconductor Structures, Interfaces, and Surface Pages: 52 - 53

12. Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures

    • A. N. Kovalev
    • F. I. Manyakhin
    • A. É. Yunovich

    Semiconductors Structures, Interfaces, and Surface Pages: 54 - 57

13. Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact

    • S. Yu. Davydov
    • A. A. Lebedev
    • S. K. Tikhonov

    Semiconductors Structures, Interfaces, and Surface Pages: 58 - 60

14. Photoelectric properties of n-CdS/p-InP heterojunctions

    • V. M. Botnaryuk
    • L. V. Gorchak
    • Yu. V. Rud’

    Semiconductors Structures, Interfaces, and Surface Pages: 61 - 66

15. Photoelectric properties of structures based on TlInS₂ single crystals

    • S. Iida
    • N. Mamedov
    • Yu. V. Rud’

    Semiconductors Structures, Interfaces, and Surface Pages: 67 - 70

16. Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects

    • N. I. Bochkareva
    • A. V. Klochkov

    Semiconductors Structures, Interfaces, and Surface Pages: 71 - 77

17. Commensurate and incommensurate indium phases on a (111)A InAs surface

    • Yu. G. Galitsyn
    • V. G. Mansurov
    • I. P. Petrenko

    Semiconductors Structures, Interfaces, and Surface Pages: 78 - 83

18. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates

    • A. F. Tsatsul’nikov
    • B. V. Volovik
    • D. Bimberg

    Low-Dimensional Systems Pages: 84 - 89

19. Exciton polaritons in long-period quantum-well structures

    • M. R. Vladimirova
    • E. L. Ivchenko
    • A. V. Kavokin

    Low-Dimensional Systems Pages: 90 - 95

20. Interimpurity light absorption in thin wires of III-V-type semiconductors

    • A. P. Dzhotyan
    • É. M. Kazaryan
    • A. S. Chirkinyan

    Los-Dimensional Systems Pages: 96 - 98

21. Characterization of GaAs/ In_xGa_1−x As quantum-dot heterostructures by electrical and optical methods

    • V. Ya. Aleshkin
    • D. M. Gaponova
    • V. I. Shashkin

    Low-Dimensional Systems Pages: 99 - 104

22. Relaxation of light-induced metastable state of boron-doped p-type a-Si:H

    • A. G. Kazanskii
    • E. V. Larina

    Amorphous, Glassy, and Porous Semiconductors Pages: 105 - 108

23. Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure

    • G. J. Adriaenssens
    • W. Grevendonk
    • O. A. Golikova

    Amorphous, Glassy, and Porous Semiconductors Pages: 109 - 111

24. Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure

    • A. A. Beloushkin
    • Yu. A. Efimov
    • E. G. Chizhevskii

    The Physics of Semiconductor Devices Pages: 112 - 115